TeraXion Inc of Quebec City, Canada (which designs and manufactures optoelectronic components and modules for high-speed fiber-optic transmission networks as well as fiber lasers and optical sensing applications) says that access to ...
Tags: TeraXion, InP modulators, drivers, receivers
Infinera Corp of Sunnyvale, CA, USA, a vertically integrated manufacturer of digital optical transport networking systems incorporating its own indium phosphide-based photonic integrated circuits (PICs), has appointed Rajal M. Patel to its ...
University of California Santa Barbara (UCSB) has developed an n-type gallium nitride (n-GaN) tunnel junction (TJ) intracavity contact to reduce threshold current and increase differential efficiency in its m-plane III-nitride ...
Tags: VCSEL, n-GaN, GaN substrates, MOCVD, MBE
Vegware, a foodservice packaging provider, has expanded its product range with the introduction of a new Tasting Notes collection for street food packaging. The new compostable plastic-free eco range includes neutral-toned coffee cups, ...
Tags: foodservice packaging, recycled materials, compostable sugar sticks
M/A-COM Technology Solutions Inc of Lowell, MA, USA (which makes semiconductors, components and subassemblies for analog RF, microwave, millimeter-wave and photonic applications) has launched the MAAM-011169 12V CATV push-pull ...
Oclaro Inc of San Jose, CA, USA (which provides components, modules and subsystems for optical communications) has announced early sampling of a 400Gb/s high electro-optic bandwidth lithium niobate (LiNbO3) external modulator for designing ...
k-Space Associates Inc of Dexter, MI, USA (which supplies thin-film metrology tools for the semiconductor, compound semiconductor and solar markets) has introduced its kSA Scanning Pyro in-situ tool, which is designed to measure temperature ...
Tags: k-Space Associates, MOCVD, Scanning Pyro
Taiwan's National Tsing Hua University has been studying ways to improve the performance of p-type gallium nitride (p-GaN) in terms of hole density and contact resistance with nickel/gold [Bo-Sheng Zheng et al, J. Appl. Phys., vol118, ...
Tags: nickel caps, Diodes, Electronics
In booth C309 (Hall Ternes) at European Microwave Week (EuMW 2015) in Paris, France (6-11 September), Infineon Technologies AG of Munich, Germany has introduced its first devices in a family of gallium nitride on silicon carbide ...
Tags: EuMW 2015, GaN-on-silicon, GaN-on-SiC, PA
Researchers in Japan have been developing ways to increase minority carrier lifetimes in lightly doped silicon carbide (SiC) with a view to insulated-gate bipolar transistors (IGBTs) [Tetsuya Miyazawa et al, J. Appl. Phys., vol118, p085702, ...
Osaka University in Japan has developed a plasma pre-treatment for chemical mechanical polishing (CMP) on gallium nitride (GaN) that avoids creating enlarged etch pits [Hui Deng et al, Appl. Phys. Lett., vol107, p051602, 2015]. Surface ...
University of Glasgow and University of Cambridge in the UK have claimed the highest frequency performance to date for gallium nitride (GaN) high-electron-mobility transistors (HEMTs) on low-resistivity (LR) silicon (Si) [A. Eblabla et al, ...
Global optical network hardware revenue (WDM and SONET/SDH) in second-quarter 2015 was up 22% on first-quarter 2015 but flat on a year ago, according to the Q2/2015 edition of the quarterly IHS Infonetics Optical Network Hardware report. ...
Infinera Corp of Sunnyvale, CA, USA, a vertically integrated manufacturer of digital optical transport networking systems incorporating its own indium phosphide-based photonic integrated circuits (PICs), says the public offer that it ...
Tags: integrated circuits, PICs
Shipments of coherent 100G ports for metro regional optical networks grew 145% year-on-year in 2014 and will grow another 118% in 2015, forecasts market research firm IHS. Led by massive purchases in China from China Mobile, 2014 was a ...