Boeing subsidiary Spectrolab Inc of Sylmar, CA, USA, which manufactures multi-junction solar cells and panels for concentrated photovoltaic and spacecraft power systems, says it is the first company to produce 4 million gallium arsenide ...
Tags: Spectrolab, Space Solar Cell
NanoFlex Power Corp of Scottsdale, AZ, USA, which develops photovoltaic technologies and intellectual property, has signed an extension to its agreement with the University of Southern California (USC) and its subcontractor University of ...
Tags: photovoltaic technologies, organic photovoltaics technologies
For third-quarter 2014, AXT Inc of Fremont, CA, USA, which makes gallium arsenide, indium phosphide and germanium substrate and raw materials, has reported revenue of $23.1m, up 8% on $21.4m last quarter and up 13% on $20.5m a year ago. ...
Tags: gallium arsenide, indium phosphide
Envelope tracking (ET) adoption rates will soar, according to a new forecast analysis published by fabless envelope tracking (ET) semiconductor firm Nujira Ltd of Cambridge, UK. The firm’s research predicts that the total market for ...
Professor Venkat Selvamanickam at the University of Houston has received a $1,499,994 grant from the US Department of Energy (DOE) SunShot Initiative to produce high-efficiency, inexpensive thin-film photovoltaics. The SunShot Initiative ...
Tags: Thin-Film PV, Metal Foil
Alta Devices of Sunnyvale, CA, USA (a Hanergy Holdings company) has announced a cooperation with Airware to enable manufacturers of small unmanned aerial vehicles (UAV) to integrate solar power into their aircraft. Founded in 2007, Alta ...
Tags: Alta Devices, GaAs, PV Hanergy
Soitec of Bernin, France, which makes engineered substrates including silicon-on-insulator (SOI) wafers and III-V epiwafers, has announced the sale of the gallium arsenide (GaAs) epitaxy business of its Soitec Specialty Electronics ...
Tags: sale of GaAs, IntelliEPI, Electronics
RF front-end component maker TriQuint Semiconductor Inc of Hillsboro, OR, USA says that its TQP9059, a versatile multi-mode, multi-band power amplifier (MMPA) module with envelope tracking, has earned an award in the Outstanding ...
Tags: TriQuint, TQP9059 MMPA, Electronics
For August, Taiwan's WIN Semiconductors Corp (the world's largest pure-play gallium arsenide foundry) has reported revenue of NT$1.04bn (US$34.5m) - its highest revenue in the past 12 months - up 7.41% on July and up 23.45% on a year ago. ...
Researchers in USA and Saudi Arabia have been exploring the potential of using 'van der Waals epitaxy' (vdWE) to grow gallium arsenide (GaAs) on silicon [Yazeed Alaskar et al, Adv. Funct. Mater., published online 26 August 2014]. The team ...
Spending on microwave RF power semiconductors will rise to more than $300m by 2019 as the availability of new gallium nitride (GaN) devices for 4-18GHz becomes more pervasive, according to the report 'Microwave RF Power Semiconductors' from ...
Tags: ABI RF power semiconductors GaN, Electrical, Electronics
The research group of professor Jairo Sinova of the Institute of Physics at Johannes Gutenberg University Mainz, in collaboration with researchers from the UK, Prague, and Japan, has realised for the first time a new, efficient spin-charge ...
Tags: Spin-Charge Converter, GaAs, Electronics
Cree Inc of Durham, NC, USA is enhancing its support of the European market by extending its partnership with UK-based distributor APC Novacom. APC Novacom now stocks all Cree RF devices that do not require a European Union (EU) license, ...
Tags: Cree, APC, Electrical
The gallium arsenide integrated circuit market will grow to $8bn in 2017, according to a new report ‘The GaAs IC Market’ by The Information Network. The biggest enabler of the mobile data increase and the most important driver ...
RF front-end component maker TriQuint Semiconductor Inc of Hillsboro, OR, USA says that it is the first gallium nitride (GaN) RF chip maker to achieve Manufacturing Readiness Level (MRL) 9, meaning that its GaN manufacturing processes have ...
Tags: TriQuint, GaN, front-end component