IQE expects revenue growth in second-half 2012 following Q2 recovery According to an interim trading update for first-half 2012, epiwafer foundry and substrate maker IQE plc of Cardiff, Wales, UK expects to report first-half revenue of ...
Physicists at The University of Texas at Austin,in collaboration with colleagues at Taiwan's National Tsing-Hua University and National Chiao-Tung University and at the Beijing National Laboratory for Condensed Matter Physics and Institute ...
Despite a cumulative silicon carbide (SiC) raw wafer and epiwafer market that will not exceed $80m in 2012, the body of related patents comprises more than 1772 patent families and over 350 companies since 1928, according to the report ...
Tags: Raw Material, Wafer
First production order comes from Solar Junction–in which the UK-headquartered wafer foundry has a$5M equity stake. Semiconductor wafer featuring multi-junction cells The advanced semiconductor epiwafer foundry IQE is to ...
Tags: IQE, Wafer Maker, CPV, Sharp
At the end of June,Riber S.A.of Bezons,France,which manufactures molecular beam epitaxy(MBE)systems as well as evaporation sources and effusion cells,completed the sale of a Compact 21 research MBE system to a research institute in Germany. ...
Tags: Riber, MBE, Compact 21, France, Germany
University of Notre Dame (UND) and IQE RF LLC of Somerset, NJ, USA have achieved record cut-off frequencies of 370GHz for InAlN/AlN/GaN/SiC high-electron-mobility transistors. The use of indium aluminum nitride (InAlN) barrier layers ...
Tags: Raw Material
Epiwafer foundry and substrate maker IQE plc of Cardiff,Wales,UK has completed its acquisition(announced on 5 June)of the entire in-house molecular beam epitaxy(MBE)epiwafer manufacturing unit of RF Micro Devices Inc of ...
5 June 2012 IQE acquires RFMD's MBE unit and secures seven-year wafer supply agreement Epiwafer foundry and substrate maker IQE plc of Cardiff,Wales,UK has signed what is described as a multi-faceted agreement to acquire the entire ...
Tags: IQE, RFMD MBE, GaAs, wireless semiconductor industry
4 June 2012 Handset RF device market to grow from$3.8bn to$5bn in 2016 As handset RF front ends(containing gallium arsenide)are becoming increasingly sophisticated in the 4G era,they cost$9-11 for 4G devices,which is twice that for 3G and ...
Massachusetts Institute of Technology (MIT) researchers have found that a post-etch anneal dramatically improves the performance of their self-aligned indium gallium arsenide (InGaAs) quantum-well metal–oxide–semiconductor ...
Riber S.A.of Bezons,France,which manufactures molecular beam epitaxy(MBE)systems as well as evaporation sources and effusion cells,has sold a Compact 21 research MBE system to what it describes as a"world famous"research laboratory in ...
Tags: Photonic Crystals, MBE, Materials
Riber S.A.of Bezons,France,which manufactures molecular beam epitaxy(MBE)systems as well as evaporation sources and effusion cells,has announced the sale of a research MBE system to South Western University in Sichuan Province,China. The ...
Tags: Riber, MBE, sale, South Western University
Researchers in France and Switzerland have used nitride semiconductor quantum cascade(QC)structures to detect short-wavelength infrared light[S.Sakr et al,Appl.Phys.Lett.,vol100,p181103,2012].The team was based variously at University of ...
Tags: Quantum cascade detectors, Short-wavelength IR, QC structures
11 May 2012 Record transconductance of 1105mS/mm for GaN/InAlN MIS-HFET University of California Santa Barbara(UCSB)has produced gate-first self-aligned metal-insulator-semiconductor heterostructure field-effect ...
Tags: GaN/InAlN, MIS-HFET, UCSB, semiconductor material
Veeco Instruments has invested in a new research and development facility in Seoul, Korea to advance high brightness LED technology. The company recently participated in an investment forum signing ceremony at the 2012 Korea Investment ...
Tags: led