For its fiscal second-quarter 2014 (ended 28 September 2013), RF Micro Devices Inc of Greensboro, NC, USA has reported record revenue of $310.7m, up 6% on $293m last quarter and 48.2% on $209.7m a year ago. The growth is attributed ...
Tags: RFMD, Electrical, Electronics
RF Micro Devices, Inc., a global leader in the design and manufacture of high-performance radio frequency solutions, reported financial results for the Company's fiscal 2014 second quarter, ended September 28, 2013. Quarterly Highlights: ...
At the SCTE Cable-Tec Expo in Atlanta (21-24 October), RF front-end component maker and foundry services provider TriQuint Semiconductor Inc of Hillsboro, OR, USA has launched the first two members of its cost-effective TriAccess ...
Tags: TriQuint, Gan Amplifiers, Electrical, Electronics
At the Compound Semiconductor IC Symposium (CSICS 2013) in Monterey, CA on 13 October, Japan's Fujitsu Ltd and Fujitsu Laboratories Ltd presented details of a high-sensitivity receiver chip they have developed that, it is reckoned, will ...
Tags: Fujitsu InP HEMT, Electrical, Electronics
Don't you just hate it when you are using your mobile phone and the call suddenly drops? You're having a business call and you lose signal because the network isn't at its best. If this happens often, you certainly need a cell phone ...
RF Micro Devices Inc of Greensboro, NC, USA has unveiled its first power doubler amplifier in a multi-chip module to support the requirements of the new data over cable service interface specification (DOCSIS) 3.1. RFMD says that its new ...
Tags: Cable, RFMD, Electrical, Electronics
RF Micro Devices Inc of Greensboro, NC, USA has begun high-volume production of multiple new power amplifiers (PAs) and power management integrated circuits (ICs) that incorporate the firm's envelope tracking (ET) technology. RFMD says that ...
Tags: Electrical, Electronics
Global electronic components distributor Digi-Key Corp of Thief River Falls, MN, USA has announced new inventory of gallium nitride (GaN) power management products, available for immediate shipment as part of an exclusive global ...
Tags: EPC E-mode GaN FETs, Electrical, Electronics
Due to the slow growth in the GaAs device market and increasing use of multi-band GaAs power amplifiers in cellular applications, total demand for semi-insulating (SI) GaAs epitaxial substrates (from manufacturers such as IQE, VPEC, Kopin, ...
Tags: EPI Production, Electronics
A strong close to 2012 allowed the gallium arsenide device market to grow by about 2% to record revenue of slightly more than $5.3bn for the year, due mainly to the cellular segment, as most other segments for GaAs devices were flat or ...
Tags: GaAs Industry, Electrical
TriQuint Semiconductor Inc of Hillsboro, OR, USA has announced the release of new gallium nitride (GaN) transistors that offer what is claimed to be superior gain, thermal management and efficiency for commercial and defense RF amplifier ...
Tags: TriQuint, Optical Modulator
Wireless and wireline communications component maker Anadigics Inc of Warren, NJ, USA says that its AWL9581 802.11ac front-end integrated circuit (FEIC), AWT6651 ProEficient power amplifier (PA), and ALT6702 HELP4 PA are enabling wireless ...
Tags: Anadigics, Galaxy Note 3
M/A-COM Technology Solutions Inc of Lowell, MA, USA, which makes semiconductors, components and subassemblies for RF, microwave and millimeter-wave applications, has launched what it claims is the industry’s first integrated core chip ...
Tags: M/A-COM, Commercial Radar
Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA, which makes enhancement-mode gallium nitride on silicon (eGaN) power field-effect transistors (FETs) for power management applications, has extended its range of high-speed, ...
Tags: EPC E-mode GaN FETs, Electrical, Electronics
RF Micro Devices Inc of Greensboro, NC, USA says that it has completed a recently announced expansion of its test, tape & reel and assembly facility in Beijing, China. In addition to newly qualified internal assembly capacity for power ...