Researchers at Meijo University and Nagoya University, Japan, have produced low-resistance n-type aluminium gallium nitride (n-AlGaN) [Toru Sugiyama et al, Appl. Phys. Express, vol6, p121002, 2013]. Using the n-AlGaN as part of an ...
Tags: LED, Electrical, Electronics
Eulitha AG (a spin-off of the Paul Scherrer Institute in Villigen, Switzerland that develops nano-lithographic technologies for optoelectronics, photonics, biotechnology and data storage applications) has announced the availability of the ...
Tags: Eulitha Nanopatterning HB-LEDs, Electrical, Electronics
Sapphire Energy, Inc., one of the world leaders in algae-based Green Crude oil production, and Phillips 66 (NYSE: PSX), an integrated energy manufacturing and logistics company, announced a strategic joint development agreement aimed at ...
Tags: Metallurgy, Mineral, Energy, Crude Oil, Oil
Roshow Technology has released an abnormal stock price announcement after experiencing three days of inflation on stock prices surpassing 25 percent. The listed company does not manufacturer sapphire substrate. It expressed that rumors on ...
Tags: sapphire substrate, price, iphone6
Sapphire substrate concept stocks have soared lately on China’s A-Shares market, but major international sapphire substrate suppliers stock prices have plunged, according to a China Securities Journal article. Out of the major ...
Apple's iPhone 6 could eeatrure a sapphire glass display that doesn't scratch even if concrete is rubbed on it. The International Bussiness Times reports that Apple has paid $578m to sapphire glass experts GT Advanced Technologies to ...
Tags: Sapphire Screen, iPhone 6, Consumer Electronics, Glass Display
Researchers at Samsung Electronics and Seoul National University (SNU) in Korea have produced high-quality free-standing gallium nitride (GaN) substrates from hydride vapor phase epitaxy (HVPE) on silicon [Moonsang Lee et al, Appl. Phys. ...
Tags: GaN-on-silicon substrates GaN HVPE, Electrical, Electronics
The penetration of gallium nitride-on-silicon (GaN-on-Si) wafers into the light-emitting diode (LED) market is forecast to increase at a compound annual growth rate (CAGR) of 69% from 2013 to 2020, by which time they will account for 40% of ...
Tags: LED, electronics
The penetration of gallium nitride-on-silicon (GaN-on-Si) wafers into the LED market is forecast to increase at a CAGR of 69% from 2013 to 2020, by which time they will account for 40% of all GaN LEDs manufactured, according to IHS. In ...
Tags: GaN-on-Silicon, LEDs
Buoyed by rising sales generated by its sapphire ingot-making subsidiary USI Optronics, ferrite core maker Acme Electronics is expected to return to profitability in the fourth quarter of 2013, according to market watchers. Acme posted a ...
Plessey announced the availability of its next generation GaN-on-Silicon mid-power LEDs. The product family doubles the efficacy of Plessey's first generation MAGIC™ (Manufactured on GaN-on-Si I/C) products released in February 2013. ...
The UK-based semiconductor company says that it has doubled efficacy since shipping its first GaN-on-Si LEDs back in April, and that its roadmap includes eclipsing the efficacy advantage currently held by sapphire-based LEDs. Plessey has ...
Tags: MID-Power LED, LED Lighting
Soraa, the world leader in the development of gallium nitride on gallium nitride (GaN on GaN™) LED technology, announced that it will open a new semiconductor fabrication plant in Buffalo, New York. In partnership with the State of ...
Plessey Semiconductors Ltd of Plymouth, UK has announced availability of its next-generation gallium nitride -on-silicon (GaN-on-Si) mid-power LEDs. The product family doubles the luminous efficacy of the firm’s first-generation MAGIC ...
Spurred by demand from the LED lighting and mobile device markets, sapphire substrate manufacturers have been actively expanding their production capacity, according to the report ‘Global Sapphire Substrate Market 2013’ from ...
Tags: LED, smartphone