The US Department of Energy’s (DOE) Advanced Research Projects Agency (ARPA-E) has announced two funding opportunities relating to solid-state lighting. Both opportunities seek proposals for “transformational advances in ...
Tags: Solid-state lighting, LEDs, ARPA-E
A team at Massachusetts Institute of Technology has developed an etch stop technique to improve performance of recessed-gate nitride semiconductor metal-insulator-semiconductor field-effect transistors (MISFETs) [Bin Lu et al, IEEE Electron ...
Tags: GaN MISFET GaN MOCVD, Electronics, Etch
In collaboration with Imperial College London in the UK and MicroLink Devices Inc of Niles, IL, USA, researchers in the US Naval Research Laboratory’s Electronics Technology and Science have proposed a novel triple-junction solar ...
HexaTech Inc of Morrisville, NC, USA has received a $2.2m award from the US Department of Energy (DOE) Advanced Research Projects Agency – Energy (ARPA-E) to enable the development of “new power semiconductor technology for the ...
Tags: power semiconductor technology, Energy, electrical power grid
With most of the cost of electricity for wind tied up in the initial capital investments made in the wind turbines themselves, GE says new technology advancements that reduce these costs could substantially lower the overall cost of wind ...
Tags: Wind Blades, blade design, Renewable Energy
Ford, General Electric and the University of Michigan are working together to develop a smart, miniaturized sensing system to extend the life of car batteries over conventional battery systems used in electric vehicles (EVs). GE will use ...
Tags: Ford, GE, battery life for EVs
Using GaN as a substrate holds promise for many industries,but has immediate applications for light-emitting diodes(LEDs),which Soraa manufactures.A major advancement in a commercially viable new substrate is a promising disruptive ...
Soraa, dedicated in developing GaN solid-state lighting technology, has been selected by Advanced Research Projects Agency-Energy (ARPA-E) to lead a project on bulk GaN substrates development. It’s the only ARPA-E funded LED substrate ...
Tags: North America Soraa GaN Substrate DOE, Lights, Lighting
Soraa Inc of Fremont, CA, USA, which develops solid-state lighting technology built on 'GaN on GaN' (gallium nitride on gallium nitride) substrates, has been selected by the US Department of Energy's (DOE) Advanced Research Projects ...
Tags: GaN substrates
Soraa will lead DOE funded research on GaN LED substrates 08 Aug 2012 The DOE's transformational-energy agency ARPA-E has selected GaN-on-GaN startup Soraa to lead a project on the development of bulk GaN substrates. Startup Soraa emerged ...
Tags: Soraa, DOE, GaN, GaN-on-GaN, LED, LED Substrates, ARPA-E
New efficiency standards for incandescent light bulbs went into effect on Jan. 1, 2012. Despite the lack of federal funding to enforce the law, domestic lighting manufacturers are required to abide by it, and the overwhelming majority are ...