Sapphire substrate concept stocks have soared lately on China’s A-Shares market, but major international sapphire substrate suppliers stock prices have plunged, according to a China Securities Journal article. Out of the major ...
The penetration of gallium nitride-on-silicon (GaN-on-Si) wafers into the light-emitting diode (LED) market is forecast to increase at a compound annual growth rate (CAGR) of 69% from 2013 to 2020, by which time they will account for 40% of ...
Tags: LED, electronics
Plessey announced the availability of its next generation GaN-on-Silicon mid-power LEDs. The product family doubles the efficacy of Plessey's first generation MAGIC™ (Manufactured on GaN-on-Si I/C) products released in February 2013. ...
The UK-based semiconductor company says that it has doubled efficacy since shipping its first GaN-on-Si LEDs back in April, and that its roadmap includes eclipsing the efficacy advantage currently held by sapphire-based LEDs. Plessey has ...
Tags: MID-Power LED, LED Lighting
Plessey Semiconductors Ltd of Plymouth, UK has announced availability of its next-generation gallium nitride -on-silicon (GaN-on-Si) mid-power LEDs. The product family doubles the luminous efficacy of the firm’s first-generation MAGIC ...
Tokyo-based semiconductor manufacturer Toshiba Corphas announced the first devices in its second generation of LETERAS white LEDs fabricated using a gallium nitride-on-silicon (GaN-on-Si) process. Scheduled for mass production in November, ...
Tags: Toshiba, GaN-on-Si LEDs
Azzurro has announced both production and lab milestones in wavelength variation using its GaN-on-Si LED template wafers and Air Water is working on a GaN-on-SiC-on-Si architecture with a new Aixtron MOCVD reactor. While the LED industry ...
Tags: LED Substrate Strategies, Lighting
German semiconductor manufacturer, Azzurro LED Technologies, announced during a talk at ICNS-10 that the company’s technology has reached the capability of achieving “1 bin” GaN-on-Si LED wafers. While showing production ...
Tags: GaN-on-Si LED Wafer, Lighting
In a presentation at the 10th International Conference on Nitride Semiconductors (ICNS-10) in Washington DC, USA (26-28 August), AZZURRO LED Technologies of Dresden, Germany announced that it has demonstrated '1-bin' wavelength LED wafers. ...
Tags: Azzurro GaN-on-Si, LED, Electrical, Electronics
The company made public today the foundation of its new LED business unit, called "Azzurro LED Technologies", dedicating more resources to migrate the LED industry to GaN-on-Si. The new business unit's strategy is to license Azzurro's ...
Tags: LED, Lights, Lighting, LED Industry
Plessey Semiconductors Ltd of Plymouth, UK says that samples of a 350mW gallium nitride -on-silicon (GaN-on-Si) LED are now available. The entry-level lighting products (part number PLB010350) are manufactured on Plessey's 6-inch MAGIC ...
Tags: LED, Electrical, Electronics
An Australian-UK consortium is offering a epitaxial silicon carbide buffer layer for 300mm silicon wafers, claiming it will improve gallium nitride growth for GaN-on-Si LED fabrication. The buffer is the result of over 10 years research ...
LED chip and lighting array maker Bridgelux Inc of Livermore, CA, USA has closed an agreement with Tokyo-based semiconductor manufacturer Toshiba Corp (announced on 22 April), which aims to strengthen and extend their strategic technology ...
Tags: Bridgelux, GaN-on-Si LEDs
Toshiba's white LED package Bridgelux is selling its gallium nitride-on-silicon (GaN-on-Si)?technology and related assets to Toshiba. The news comes as the two companies announced that they will expand their licensing and manufacturing ...
Bridgelux is selling its gallium nitride-on-silicon (GaN-on-Si) technology and related assets to Toshiba Toshiba’s white LED package The two companies also announced they will ramp up a factory in Japan to make LEDs based ...
Tags: Bridgelux, GaN-on-Si Assets