Azzurro has announced both production and lab milestones in wavelength variation using its GaN-on-Si LED template wafers and Air Water is working on a GaN-on-SiC-on-Si architecture with a new Aixtron MOCVD reactor. While the LED industry ...
Tags: LED Substrate Strategies, Lighting
Researchers in Guangdong province, China, have been exploring the potential for improved light extraction from nitride semiconductor light-emitting diodes (LEDs) on patterned sapphire substrates with spherical cap bumps [Haiyan Wang et al, ...
Tags: LEDs, Electrical, Electronics
Researchers based in the USA and Korea have found "an unequivocal correlation between the onset of high injection and the onset of the efficiency droop" of gallium indium nitride (GaInN) light-emitting diodes (LEDs) [David S. Meyaard et al, ...
Tags: LED, Nitride LED, Electrical, Electronics
Researchers in China have been developing nanopatterned-sapphire substrates (NPSS), achieved with nano-sphere lithography (NSL), as a basis for the production of superior aluminium gallium nitride (AlGaN) semiconductor material for deep ...
Tags: DUV LEDs, LED, Electrical, Electronics
It is reported that Hong Kong University of Science and Technology (HKUST) has developed silicon substrate green and yellow nitride semiconductor LEDs. Details of the development were published in the May 29th issue of IEEE Electronic ...
Tags: HKUST, Lighting, Semiconductor, LED
New RPI research proves the concept of integrating LED emitters on the same chip with other electronic components such as transistors, while other new research focuses on maximizing the light extraction efficiency of LEDs and lowering cost ...
Northwestern University's Center for Quantum Devices has developed a suface-plasmon (SP) enhancement technique for ultraviolet (UV) light-emitting diodes (LEDs) produced on silicon substrates [Chu-Young Cho et al, Appl. Phys. Lett., vol102, ...
Tags: UV-LEDs, Electrical, Electronics
Both product families take advantage of SemiLEDs unique patented vertical LED structure that delivers superior performance in directional industrial applications, such as printing, coating and curing, and specialty applications including ...
The Smart Lighting Engineering Research Center at Rensselaer Polytechnic Institute (RPI) has demonstrated the first monolithic integration of LED and high electron mobility transistor (HEMT) on the same gallium nitride (GaN) chip. It is ...
Tags: Smart Lighting, Lights, Lighting, LED Lighting
SemiLEDs Corp, has released two new UV-LED product series, the 10-watt high-power N9 series, and the 0.17 to 0.50-watt mid-power P50N series. According to proprietary vertical LED structure, both product series are designed for industrial ...
The Smart Lighting Engineering Research Center at Rensselaer Polytechnic Institute (RPI) in Troy, NY, USA has demonstrated what is reckoned to be the first monolithically integrated light-emitting diode (LED) and high-electron-mobility ...
Tags: Smart Lighting, GaN Chip
LED chip and component maker SemiLEDs Corp of Hsinchu Science Park, Taiwan, has released two new UV-LED product families, the 10-watt high-power N9 series, and the 0.17 to 0.50-watt mid-power P50N series. Based on SemiLEDs’ patented ...
Tags: SemiLEDs UV-LEDs, Electrical
Mass production of GaN template wafers based on sapphire substrates could free LED manufacturers' MOCVD reactors for more LED production and lower component cost helping drive the deployment of SSL. Hitachi Cable has become the second ...
Tags: Hitachi Cable, GaN-Template LED, Lighting
Gwangju Institute of Science and Technology and Samsung Electronics Co Ltd of South Korea have developed a zinc oxide (ZnO) nanorod (NR) process for improving light extraction from gallium nitride (GaN) light-emitting diodes (LEDs) by up to ...
Tags: GaN, LEDs, Electronics
Ohio State University (OSU) has used polarization engineering to create low-resistance tunnel junctions in gallium nitride (GaN)-based structures [Sriram Krishnamoorthy et al, Appl. Phys. Lett., vol102, p113503, 2013]. Such junctions could ...
Tags: GaN, InGaN, semiconductor