Researchers in Germany are proposing scandium nitride (ScN) as a suitable buffer for gallium nitride (GaN) on silicon (Si) growth [L. Lupina et al, Appl. Phys. Lett., vol107, p201907, 2015]. The attraction of ScN is a very small mismatch ...
Tags: GaN devices, microscope
Plessey Semiconductors Ltd in the UK has been improving its indium gallium nitride (InGaN)-on-silicon light-emitting diode (LED) technology [Liyang Zhang et al, Journal of the Electron Devices Society, vol3, p457, 2015]. A light output ...
Tags: GaN-on-silicon LEDs, Plessey MOCVD
Jijun Feng and Ryoichi Akimoto based in China and Japan have developed low-threshold green and green-yellow laser diodes (LDs) based on a beryllium zinc cadmium selenide (BeZnCdSe) quantum well [Appl. Phys. Lett., vol107, p161101, 2015]. ...
Tags: laser diodes, zirconium dioxide
University of California Santa Barbara (UCSB) has developed an n-type gallium nitride (n-GaN) tunnel junction (TJ) intracavity contact to reduce threshold current and increase differential efficiency in its m-plane III-nitride ...
Tags: VCSEL, n-GaN, GaN substrates, MOCVD, MBE
KTH-Royal Institute of Technology in Sweden has used corrugated epitaxial lateral overgrowth (CELOG) to create heterojunctions consisting of n-type indium phosphide (n-InP) and p-type silicon (p-Si) [Y. T. Sun et al, Appl. Phys. Lett., ...
Tags: corrugated epitaxial, silicon
Researchers in Europe have developed a low-temperature plasma-assisted molecular beam epitaxy (PAMBE) process for direct growth of indium gallium nitride (InGaN) on silicon (Si) substrates [Pavel Aseev et al, Appl. Phys. Lett., vol106, ...
Zhejiang University in China and University of Cambridge in the UK have jointly developed ultraviolet light-emitting diodes (UV-LEDs) based on metal-semiconductor Schottky junctions between silver nanowires (AgNWs) and gallium nitride (GaN) ...
Switching to vaping is definitely a smart decision. Yet, this does not mean that all ecig products out there are worthy purchases. Knowing about shopping for electronic cigarettes wisely can help guarantee that your hard earned money is ...
Tags: electronic cigarettes, nickel, copper, Consumer Electronics
CRAIC Technologies of San Dimas, CA, USA has launched the FLEX UV-visible-NIR microspectrophotometer concept, which is designed to be flexible in configuration, capabilities and pricing. Tailored for cost-effective spectroscopic analysis ...
Tags: CRAIC Technologies, Electrical
Ohio State University and University of Illinois at Chicago have developed deep ultraviolet (DUV) light-emitting diodes (LEDs) based on III-nitride semiconductor nanowires [Thomas F Kent et al, Nanotechnology, vol25, p455201, 2014]. The ...
Mahr Federal Inc. Mahr Federal to feature the MarVision MM 320, a new video measuring microscope with image processing capability, at MD&M West. PROVIDENCE, RI – Mahr Federal will feature the MarVision MM 320, a new video measuring ...
Tags: video measuring microscope, image processing capability, Health
83 finalists will now be whittled down to the winners in 12 categories, to be announced at the Toy of the Year Awards in February 2015. The Toy Industry Association has revealed the 83 finalists for the 2015 Toy of the Year Awards. ...
Researchers have demonstrated how noise in a microwave amplifier is limited by self-heating at very low temperatures (J Schleeh et al, ‘Phonon black-body radiation limit for heat dissipation in electronics’, Nature Materials, 10 ...
Tags: Microwave Amplifier, transistor
The Fraunhofer Institute for Laser Technology ILT of Aachen, Germany has worked with RWTH Aachen University’s Institute of Physics (IA) to develop an analysis technology that, for the first time it is claimed, allows the structural ...
Tags: LED light, Laser system
Researchers from Ohio State University (OSU) and University of California–Irvine (UCI) have developed a band engineering technique to improve the results from photo-electro-chemical (PEC) etch of nitride semiconductors [Prashanth ...