Tokyo-based Showa Denko K.K. (SDK) has decided to expand its facilities for producing high-quality-grade silicon carbide (SiC) epitaxial wafers for power devices - which have already been marketed under the trade name High-Grade Epi (HGE) - ...
Tags: SiC power devices, semiconductors
PowerAmerica — a manufacturing institute consisting of public and private partners from the semiconductor industry, the US Department of Energy (DoE), national laboratories and academia — in early August selected Navitas ...
Tags: PowerAmerica, Fast Chargers
Wolfspeed of Raleigh, NC, USA — a Cree Company that makes silicon carbide (SiC) power products and GaN-on-SiC high-electron-mobility transistors (HEMTs) and monolithic microwave integrated circuits (MMICs) — has extended its ...
Tags: Wolfspeed, silicon carbide
Microsemi Corp of Aliso Viejo, CA, USA (which makes chips for aerospace & defense, communications, data-center and industrial markets) has become a member of PowerAmerica — a manufacturing institute consisting of public and private ...
Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA, which makes enhancement-mode gallium nitride on silicon (eGaN) power field-effect transistors (FETs) for power management applications, has announced the availability of a ...
Qorvo Inc of Greensboro, NC, USA (which provides core technologies and RF solutions for mobile, infrastructure and defense applications) has launched an asymmetric Doherty amplifier enabling ultra-high levels of power efficiency in the ...
Tags: Qorvo, GaN, RF, GaN-on-SiC
Atomic layer deposition (ALD) thin-film technology firm Picosun Oy of Espoo, Finland, Taiwan’s National Chiao Tung University (NCTU) and Atom Semicon Co Ltd of New Taipei City, Taiwan have begun a joint collaboration on the ...
MACOM Technology Solutions Holdings Inc of Lowell, MA, USA (which makes semiconductors, components and subassemblies for analog RF, microwave, millimeter-wave and photonic applications) has unveiled a development kit targeted at helping ...
Tags: RF Systems, power transistors
At the 2017 Symposia on VLSI Technology and Circuits in Kyoto, Japan (5-8 June), nanoelectronics and photovoltaics research centre Imec of Leuven, Belgium unveiled new process improvements for next-generation devices. For the first time it ...
Tags: Imec, transistors
At the 2017 Symposia on VLSI Technology and Circuits in Kyoto, Japan (5-8 June), nanoelectronics and photovoltaics research centre Imec of Leuven, Belgium reported record values below 10-9Ω.cm2 for PMOS source/drain contact ...
Tags: PMOS Transistors, wafers
Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA, which makes enhancement-mode gallium nitride on silicon (eGaN) power field-effect transistors (FETs) for power management applications, has announced the EPC2111, a 30V ...
Tags: transistors, GaN transistor
Japan’s ROHM Semiconductor has developed 1200V 400A/600A-rated full-silicon carbide (SiC) power modules [BSM400D12P3G002/BSM600D12P3G001] - available in June (for samples and OEM quantities) - optimized for inverters and converters in ...
Tags: power modules, Semiconductor
Researchers in South Korea and the USA claim record 2190cm2/V-s effective mobility for indium gallium arsenide (InGaAs) quantum well (QW) metal-oxide-semiconductor field-effect transistors (MOSFETs) on 300mm-diameter (100) silicon ...
Tags: Transistors, MOSFETs
A new top-end Qualcomm chipset is allegedly already in development, paving the way for next year’s flagship smartphones. US chipmaker Qualcomm is a global leader for smartphone processors, which explains why its chips feature in ...
Tags: Qualcomm chipset, smartphone
GaN Systems Inc of Ottawa, Ontario, Canada – a fabless developer of gallium nitride (GaN)-based power switching semiconductors for power conversion and control applications – says that its transistors are being used by power ...
Tags: GaN Systems, Solar Power Inverter