Rema Power’s F1 servo motors and drivers (photo courtesy of Rema Power Enterprise). Rema Power Enterprise Co., Ltd., a leading Taiwanese maker of servo motors, servo drivers, inverters, and programmable controllers, has rolled out ...
Tags: Rema, servo motor
Researchers at the Future Renewable Electric Energy Distribution and Management (FREEDM) Systems Center at North Carolina State University (NCSU) have used off-the-shelf silicon carbide (SiC)-based components to develop an inverter with ...
VisIC Technologies Ltd of Nes Ziona, Israel, a fabless developer of power conversion devices based on gallium nitride (GaN) metal-insulator-semiconductor high-electron-mobility transistors (MISHEMTs) founded in 2010, has launched a new ...
Tags: VisIC, MISHEMTs, new 650V GaN power switch
The launch in late August by Dialog Semiconductor plc - a fabless provider of highly integrated power management, AC/DC power conversion, solid-state lighting (SSL) and Bluetooth low-energy technology - of a gallium nitride (GaN) power IC ...
TDK Corporation and Toshiba Corporation have agreed to establish a joint venture, TDK Automotive Technologies Corporation, to develop and manufacture automotive inverters for hybrid vehicles, plug-in hybrids and electric vehicles. I. ...
Tags: TDK, Toshiba, joint venture
EpiGaN nv of Hasselt, near Antwerp, Belgium, which supplies commercial-grade 150mm- and 200mm-diameter gallium nitride on silicon (GaN-on-Si) epitaxial wafers for 600V high-electron-mobility transistor (HEMT) power and RF devices, says that ...
Stion Energy Services (SES) - the turn-key project development arm of Stion Corp of San Jose, CA, USA, which makes CIGS (copper indium gallium selenium) photovoltaic modules – says that a 722kW solar array using frameless modules ...
EpiGaN nv of Hasselt, near Antwerp, Belgium, which supplies commercial-grade 150mm- and 200mm-diameter gallium nitride on silicon (GaN-on-Si) epitaxial wafers for 600V high-electron-mobility transistor (HEMT) power semiconductors, has been ...
Tags: EpiGaN, GaN-on-Si, nomination
Due to falling prices and the commercial availability of wide-bandgap (WBG) semiconductor power devices from multiple sources, the adoption of silicon carbide (SiC) and gallium nitride (GaN) power devices in power supplies for computers, ...
Tags: Semiconductor, GaN power devices
IXYS Corp of Milpitas, CA, USA and Leiden, The Netherlands, which provides power semiconductors and mixed-signal ICs for power conversion and motor control applications, has announced availability of its IXFN50N120SK and IXFN70N120SK 1200V ...
When the first SiC diode was launched in 2001, the industry questioned the future of the SiC power business: Will it grow? Is this a real business? But 15 years later, in 2016, people don't ask these questions anymore, since the SiC power ...
Tags: SiC Power, SiC device
Japan's Rohm Semiconductor has announced the availability of a new 1700V silicon carbide (SiC) metal-oxide-semiconductor field-effect transistor (MOSFET) optimized for industrial applications, including manufacturing equipment and ...
Tags: SiC, MOSFET, manufacturing equipment
In booth 9-242 at PCIM (Power Conversion Intelligent Motion) Europe 2016 in Nuremburg, Germany (10–12 May), Wolfspeed of Research Triangle Park, NC, USA — a Cree Company that makes silicon carbide (SiC) power products including ...
Tags: Power Module, Gate Driver
Cobra Electronics, which rose to prominence with the CB Radio craze in the 1970s, has entered the action sport camera game by acquiring WASPcam, which distributes affordable, high-performance HD action-sports cameras and accessories to ...
Tags: Cobra Electronics, WASPcam, Acquisition
Siemens and Valeo have signed an agreement to establish a joint venture (JV) to develop powertrains for electric cars. The JV will have headquarters in Erlangen, Germany, and facilities in France, Norway, Poland, Hungary and China. ...
Tags: Siemens, Valeo, JV, Joint venture, Powertrains, Electric cars