In booth C309 (Hall Ternes) at European Microwave Week (EuMW 2015) in Paris, France (6-11 September), Infineon Technologies AG of Munich, Germany has introduced its first devices in a family of gallium nitride on silicon carbide ...
Tags: EuMW 2015, GaN-on-silicon, GaN-on-SiC, PA
Exhibiting in Stand 250 at European Microwave Week (EuMW 2015) in Paris, France (6-11 September), Diamond Microwave Devices Ltd of Leeds, UK (which specializes in high-performance microwave power amplifiers) has announced a ten-fold ...
Tags: EuMW 2015, GaN, Diamond Microwave
Seoul Viosys Co Ltd and Sensor Electronic Technology Inc (SETi) of Columbia, SC, USA (in which Seoul Viosys acquired a majority stake just last month) are to jointly commercialize and expand sales of Violeds technology. The technology, ...
M/A-COM Technology Solutions Inc of Lowell, MA, USA (which makes semiconductors, components and subassemblies for analog RF, microwave, millimeter-wave and photonic applications) has announced that the MAGX-100027-100C0P, a wideband ...
At European Microwave Week (EuMW 2015) in Paris, France (8–10 September), M/A-COM Technology Solutions Inc of Lowell, MA, USA (which makes semiconductors, components and subassemblies for analog RF, microwave, millimeter-wave and ...
Guerrilla RF Inc of Greensboro, NC, USA - which provides monolithic microwave integrated circuits (MMICs) to wireless infrastructure original equipment manufacturers - has added to its family of high-linearity gain blocks (which features a ...
Researchers in Belgium have studied forward gate breakdown of enhancement-mode aluminium gallium nitride/gallium nitride (AlGaN/GaN) high-electron-mobility transistors with p-type GaN gate electrodes [Tian-Li Wu et al, IEEE Electron Device ...
Tags: P-Gan Gate, Electronics
The gallium nitride (GaN) substrate market will grow from $2.2bn in 2014 to more than $4bn by 2020, forecasts research and consulting firm IndustryARC in the report 'Gallium Nitride (GaN) Substrates Market Analysis: By Type (GaN on ...
Tags: Diameters, GaN Substrate Market
The US Air Force has awarded Cree Inc of Durham, NC, USA, which makes silicon carbide (SiC) and gallium nitride (GaN) wafers and devices as well as LEDs, a $4.1m follow-on contract, enabling qualification of a high-performance power ...
Tags: GaN wafers, SiC
UK-based Plessey says that the Regional Growth Fund (RGF) has officially granted £6.7m towards the expansion of its facility in Plymouth, UK for manufacturing its MaGIC (Manufactured on GaN-on-Si I/C) gallium nitride on silicon LEDs. ...
Tags: LED Production, LED street
In booth 1 (level 0) at the 17th Conference on Power Electronics and Applications (EPE'15 - ECCE Europe) hosted by CERN in Geneva, Swizerland (8–10 September), GaN Systems Inc of Ottawa, Ontario, Canada, a fabless developer of gallium ...
M/A-COM Technology Solutions Inc of Lowell, MA, USA (which makes semiconductors, components and subassemblies for analog RF, microwave, millimeter-wave and photonic applications) has now shipped more than 1 million gallium nitride on ...
Technische Universit Wien (TU Wien) in Austria has improved its bi-functional 6.8μm quantum cascade laser and detector (QCLD) technology [Benedikt Schwarz et al, Appl. Phys. Lett., vol107, p071104, 2015]. It is hoped that monolithic ...
Osaka University in Japan has developed a plasma pre-treatment for chemical mechanical polishing (CMP) on gallium nitride (GaN) that avoids creating enlarged etch pits [Hui Deng et al, Appl. Phys. Lett., vol107, p051602, 2015]. Surface ...
University of Glasgow and University of Cambridge in the UK have claimed the highest frequency performance to date for gallium nitride (GaN) high-electron-mobility transistors (HEMTs) on low-resistivity (LR) silicon (Si) [A. Eblabla et al, ...