Falling prices to dampen record PV inverter shipments in 4Q12,says IMS Research Press release;Jackie Chang,DIGITIMES[Friday 12 October 2012]Following a decline in the third quarter of 2012,global PV inverter shipments are forecast to reach ...
Tags: IMS, PV inverter, shipments
Transphorm Inc of Goleta,near Santa Barbara,CA,USA(which designs and delivers power conversion devices and modules)has been selected by the World Economic Forum as a 2013 Technology Pioneer,citing the firm's innovations in gallium ...
Tags: Transphorm, GaN, HEMTs
Dongguan Tianyu Semiconductor Technology Co Ltd,which claims to be the first manufacturer of silicon carbide(SiC)epitaxial wafers in China,has started to expand its SiC epiwafer business globally after the completion of three contracts in ...
All American extends distribution agreement with GeneSiC Electronic component distributor All American Semiconductor has signed extended its distribution agreement with GeneSiC Semiconductor Inc of Dulles,VA,USA,which develops silicon ...
Tags: GeneSiC SiC, Distribution, Agreement
Less than one year after showcasing the 152 lumens-per-watt concept LED bulb,Cree,Inc.(Nasdaq:CREE)delivers a new performance benchmark with the 170 lumens-per-watt(LPW)prototype LED light bulb.The innovations behind the high-performance ...
Tags: LED, Cree, Light Bulb
Power electronics device market to reach $20bn this year The total market for semiconductor devices (discretes, modules and ICs) dedicated to the power electronics industry will reach $20bn in 2012, according to the report 'Status of the ...
Tags: raw material, GaN SiC
EpiGaN starts 8-inch GaN-on-Si development on Aixtron reactors Deposition equipment maker Aixtron SE of Herzogenrath, Germany says that new customer EpiGaN of Hasselt, Belgium, a start-up manufacturer of III-nitride epitaxial material, ...
Tags: Aixtron MOCVD
AIXTRON SE announced that EpiGaN, a new customer and a start-up manufacturer of III-Nitrides epitaxial material in Hasselt, Belgium, has successfully commissioned two new MOCVD systems, able to operate either in multiple 6” or in ...
Tags: MOCVD, GaN-on-Si Wafer
The Gallium Nitride (GaN) semiconductor device market is expected to reach $12.6m by the end of 2012, and the phenomenal growth rate of 60-80% year-on-year is expected to continue in subsequent years, according to the report ‘Gallium ...
Tags: Raw material, GaN
Durham, NC – Cree, Inc. (Nasdaq: CREE) introduces the XLamp XP-G2 LED to deliver luminaire manufacturers up to 20 percent more lumens per watt and 2.5 times the lumens-per-dollar over the original XP-G LED. The brighter, more ...
Mitsubishi Electric to sample SiC power modules for more compact,efficient electronic equipment Tokyo-based Mitsubishi Electric Corp says that,at the end of July,it will begin shipping samples of five kinds of silicon carbide(SiC)-based ...
Tags: Mitsubishi Electric, SiC power modules, electronic equipment
The British Power Conversion Company is pleased to announce the launch of the anticipated PowerPro EL100XA series, an expansion to the existing emergency lighting static inverter range. The XA series allows for an internal self ...
An all electric injection molding machine offers several important benefits, mostly related to the fact that individual motors control each function, as opposed to a control system consisting of a complicated arrangement of hydraulic hoses. ...
Tags: Industry Trends, All-electric injection molding machine
21 June 2012 SemiSouth doubles current rating of 1200V SiC diodes to 10A Picture:SemiSouth's SDB10S120 1200V/10A diodes in TO-252-2L packages. SemiSouth Laboratories Inc of Starkville,MS,USA,which designs and manufactures silicon ...
Tags: SemiSouth, SiC diodes, USA
Soitec of Bernin,France,which makes engineered substrates including silicon-on-insulator(SOI)wafers(as well as III-V epiwafers through its Picogiga International division),has completed construction and grid connection for the largest ...