Nitronex LLC of Durham, NC, USA, which designs and makes gallium nitride on silicon (GaN-on-Si)-based RF power transistors for the defense, communications, cable TV and industrial & scientific markets, has fully qualified its NPT1015 ...
Tags: RF Power Transistor, Nitronex
Intel's latest chip, its 4th generation Core processor code-named Haswell, will take a 6 hour battery and make it last for 9 hours. The 4th generation Core may be the first chip from Intel that can extend -- in a single generation -- PC ...
Tags: PC, Chip, Computer Products
Synthetic diamond materials firm Luxembourg-registered Element Six (part of the De Beers Family of Companies, and co-owned by Belgian materials group Umicore) has acquired the assets and intellectual property of Group4 Labs Inc of Menlo ...
Tags: diamond materials, Electronics
Starting in late 2011, the power electronics downturn in 2012 was quite severe, exhibiting a 20% drop. The market suffered from the global economic downturn, combined with external factors such as China controlling what happened in some ...
To address the increasing demands from the developing market in Thailand, EVERLIGHT presents its full offering of LED lighting components, LED digital displays, Automotive LEDs and Infrared LEDs at this year’s LED EXPO THAILAND to ...
Tags: EVERLIGHT, LED Components
Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA, which makes enhancement-mode gallium nitride on silicon (eGaN) power field-effect transistors (FETs) used in power management applications, has redesigned its website to include ...
Tags: EPC, Electrical, Electronics
RF front-end component maker and foundry services provider TriQuint Semiconductor Inc of Hillsboro, OR, USA has announced 15 new gallium nitride (GaN) amplifiers and transistors along with two new GaN processes – to be displayed in ...
Tags: TriQuint, Electrical, Electronics
Intel will continue to fulfill Moore's Law for the foreseeable future, but keeping up with it is becoming more of a challenge as chips get smaller, according to a company executive. Moore's Law states that the number of transistors that ...
Tags: Computer Products, Shrinking Chips, Chips
Xilinx Inc of San Jose, CA, USA, which provides all-programmable field-programmable gate arrays (FPGAs), systems-on-chip (SoCs) and 3D ICs, and Japan's Sumitomo Electric Industries Ltd are collaborating to reduce capital expenditure (CapEx) ...
Tags: SEI, Electrical, Electronics
Funded by the US Army Research Office, researchers at North Carolina State University ( at the atomic scale (just one atom thick). The technique can be used to create the thin films on a large scale, sufficient to coat wafers that are ...
Tags: NCSU, Atomic-Layer Thin-Film
Mesuro Ltd of Pencoed Technology Park, UK, a spin-off from Cardiff University’s Centre for High Frequency Engineering, has announced the capability for its RF measurement services to deliver whatever measurements are needed for ...
Tags: Non-Linear Devices, Mesuro
M/A-COM Technology Solutions Inc of Lowell, MA, USA (which makes analog semiconductors, components and subassemblies for RF, microwave and millimeter-wave applications) has introduced its series of GaN in Plastic packaged power transistors ...
Tags: MACOM, Plastic Transistors
M/A-COM Technology Solutions Inc of Lowell, MA, USA (which makes analog semiconductors, components and subassemblies for RF, microwave and millimeter-wave applications) has introduced its series of GaN in Plastic packaged power transistors ...
Tags: MACOM, Plastic Transistors
Epiwafer foundry and substrate maker IQE plc of Cardiff, Wales, UK has launched gallium nitride (GaN)-based high-electron-mobility transistor (HEMT) epitaxial wafers on 150mm-diameter semi-insulating silicon carbide (SiC) substrates ...
Researchers in the USA at BAE Systems and Purdue University have developed atomic layer deposited (ALD) aluminium oxide as passivation for nitride semiconductor high-electron-mobility transistors (HEMTs) [Dong Xu et al, Electron Device ...
Tags: Oxide Passivation, Electronics, Atomic Layer