On 24 May, epitaxial deposition and process equipment maker Veeco Instruments Inc of Plainview, NY, USA received an anticipated letter from The NASDAQ Stock Market LLC notifying it that it has not regained compliance with NASDAQ Listing ...
Tags: Veeco, MOCVD, Electrical&Electronics
An Australian-UK consortium is offering a epitaxial silicon carbide buffer layer for 300mm silicon wafers, claiming it will improve gallium nitride growth for GaN-on-Si LED fabrication. The buffer is the result of over 10 years research ...
The Queensland Micro and Nanotechnology Facility (QMF) of Griffith University in Brisbane, Australia and its industry partner, plasma etch, deposition and thermal processing equipment maker SPTS Technologies Ltd of Newport, Wales, UK, have ...
Tags: Silicon, Micro and Nanotechnology
LayTec AG of Berlin, Germany (which makes in-situ metrology systems for thin-film processes, focusing on compound semiconductor and photovoltaic applications) says that, in his invited talk at the LED Technology Forum in Singapore (7-10 ...
Tags: LayTec, Singapore's IMRE
Although global capital spending this year in the solar supply chain is expected to fall to its lowest level since 2006, indications signal that the downturn in investment has hit bottom and that purchases of equipment may soon rebound. ...
Tags: Solar Industry, Energy
LED epitaxial wafer and chip maker Epistar expects LED applications to account for 30% of total revenues in third-quarter 2013, up from the current 20-25%, due to increasing demand. As production capacity for blue-color LED (InGaN) chips ...
LAST POWER (Large Area silicon-carbide Substrates and heTeroepitaxial GaN for POWER device applications), the European Union-sponsored program aimed at developing a cost-effective and reliable technology for power electronics, has announced ...
Tags: SiC, substrates GaN
On 13 May, epitaxial deposition and process equipment maker Veeco Instruments Inc of Plainview, NY, USA received a letter from The NASDAQ Stock Market notifying it that it is not in compliance with NASDAQ Listing Rule 5250(c) (1) because ...
Tags: Veeco, NASDAQ Notice
Verticle Inc of Dublin, CA, USA has extended its range of Honeycomb hexagonal-shaped vertically structured InGaN-based LED chips from blue wavelengths (in mass production since February 2012) to ultraviolet (UV). As with the firm’s ...
Valence Process Equipment, Inc. (VPE) has announced the commercial release of the VPE GaN-500 MOCVD system, a new metal organic chemical vapor deposition (MOCVD) system for production of high-brightness light emitting diodes (LEDs). The VPE ...
Tags: LED industry, LED
Researchers in Korea have used three-dimensional (3D) graphene foam as a transparent conductor for the p-contact of blue nitride semiconductor light-emitting diodes (LEDs) [Byung-Jae Kim et al, Appl. Phys. Lett., vol102, p161902, 2013]. The ...
Tags: Graphene foam, LEDs
Researchers based in China and Sweden have proposed fast chemical vapor deposition (CVD) of graphene as a route to more cost-effective transparent conducting layers (TCLs) for nitride semiconductor light-emitting diodes (LEDs) [Xu Kun et ...
Epiwafer foundry and substrate maker IQE plc of Cardiff, Wales, UK has launched gallium nitride (GaN)-based high-electron-mobility transistor (HEMT) epitaxial wafers on 150mm-diameter semi-insulating silicon carbide (SiC) substrates ...
Epiwafer foundry and substrate maker IQE plc of Cardiff, Wales, UK has launched the new division IQE Wireless, which will provide a complete ‘one-stop shop’ for radio frequency (RF) wireless epitaxial wafer materials. The new ...
Tags: IQE, Dedicated Wireless Products
Researchers in the USA at BAE Systems and Purdue University have developed atomic layer deposited (ALD) aluminium oxide as passivation for nitride semiconductor high-electron-mobility transistors (HEMTs) [Dong Xu et al, Electron Device ...
Tags: Oxide Passivation, Electronics, Atomic Layer