Power semiconductor device maker International Rectifier Corp (IR) of El Segundo, CA, USA has qualified and shipped product built on its gallium nitride (GaN)-based power device technology platform for a home theater system manufactured by ...
Worldwide silicon wafer area shipments decreased during the first quarter 2013 when compared to fourth quarter 2012 area shipments, according to the SEMI Silicon Manufacturers Group (SMG) in its quarterly analysis of the silicon wafer ...
Researchers in China have used strain engineering to improve the light output power of 530nm green light-emitting diodes (LEDs) by 28.9% at 150mA current injection [Hongjian Li et al, Appl. Phys. Express, vol6, p052102, 2013]. The research ...
Epiwafer foundry and substrate maker IQE plc of Cardiff, Wales, UK has announced the launch of the new division IQE Infrared, which aims to provide customers with a complete 'one-stop shop' for infrared substrate and epitaxial wafer ...
Tags: Electrical, Electronics
A new semiconductor device capable of emitting two distinct colours has been created by a group of researchers in the US, potentially opening up the possibility of using LEDs universally for cheap and efficient lighting. The ...
Tags: LED Dual-color Lasers, LED Lightin, LED
Epitaxial deposition and process equipment maker Veeco Instruments Inc of Plainview, NY, USA has reported selected financial metrics and business highlights for first-quarter 2013 (excluding revenue and earnings, due to the firm's ongoing ...
Due to strong global demand for LCD TVs, demand for LED backlight units (BLUs) has become robust since the second quarter of 2013 and the booming demand is expected to persist until November, according to Taiwan-based LED makers. LED ...
Tags: LED backlight, Taiwan, Electronics
Traditionally Gallium Nitride (GaN) LED devices are produced on either sapphire or silicon carbide (SiC) substrates, due to the good crystal lattice matching between the materials and the GaN, with typically 2” or 4” diameter ...
Rising demand for LED backlight and lighting products helped LED chipmakers see capacity utilization rates increase to 90% in the second quarter. Despite shortages of high-end products, the overall LED industry continues to be in ...
Tags: LED Market, LED, LED lighting
RF front-end component maker and foundry services provider TriQuint Semiconductor Inc of Hillsboro, OR, USA has produced what are reckoned to be the industry’s first gallium nitride (GaN) transistors using GaN-on-diamond wafers, which ...
Tags: Triquint, Electronics, HEMT devices
Mass production of GaN template wafers based on sapphire substrates could free LED manufacturers' MOCVD reactors for more LED production and lower component cost helping drive the deployment of SSL. Hitachi Cable has become the second ...
Tags: Hitachi Cable, GaN-Template LED, Lighting
The UK’s Engineering and Physical Sciences Research Council (EPSRC) has awarded funding totaling more than £823,800m to two universities for the project ‘Novel High Thermal Conductivity Substrates for GaN Electronics: ...
Tags: Electrical, Electronics, GaN Electronics
Hitachi Cable has launched a new mass-production technology for GaN-templates as shown in Figures 1 and 2 below. The process allows high-quality GaN single-crystal thin film to be grown on a sapphire substrate and the company plans to ...
Tags: Hitachi Cable, LEDs
Hitachi Cable, Ltd. announced today that it has developed a new mass-production technology for GaN-templates, in which a high-quality gallium nitride (GaN) single-crystal thin film is grown on a sapphire substrate. Using this product as a ...
Tags: Hitachi, Gan-Template Product
Tokyo-based Hitachi Cable Ltd says that it has developed new mass-production technology for gallium nitride (GaN) templates (see Figure 1), in which a high-quality gallium nitride (GaN) single-crystal thin film is grown on a sapphire ...
Tags: Hitachi Cable, GaN substrate, Electronics