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GaN Electronics
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NRL Demonstrates Growth of Thin-Film Niobium Nitride
Jul 7, 2017The US Naval Research Laboratory (NRL) has demonstrated the ability to grow thin films of the transition-metal nitride Nb2N (niobium nitride). The thin crystalline material has a similar structure to gallium nitride (GaN), but its ...
Tags: Thin-Film Niobium Nitride, LED
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EPSRC Has Awarded Funding Totaling More Than £823,800m to Two Universities
May 2, 2013The UK’s Engineering and Physical Sciences Research Council (EPSRC) has awarded funding totaling more than £823,800m to two universities for the project ‘Novel High Thermal Conductivity Substrates for GaN Electronics: ...
Tags: Electrical, Electronics, GaN Electronics
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Cambridge Has Opened a New ?1m Facility for Growing Gallium Nitride
Apr 7, 2013The UK’s University of Cambridge has opened a new £1m facility for growing gallium nitride that aims to enable researchers to expand and accelerate their work, which promises to further reduce the cost and improve the efficiency ...
Tags: LED lights, LED, lights
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GaN-Based Transistors Are Promising for Future High-Frequency/High-Power Devices
Mar 22, 2013The first millimeter-wave power demonstration of aluminium gallium nitride/gallium nitride (AlGaN/GaN) high-electron-mobility transistors (GaN) grown on a (110) silicon substrate has been claimed by a French team of researchers [A. Soltani ...
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The Aixtron System Ordered by China Dynax Semiconductor Dedicated to Gan Electronics
Dec 10, 2012Dynax Semiconductor Inc. of China has placed its first purchase order for an AIXTRON Close Coupled Showerhead (CCS) CRIUS MOCVD system aimed at production of nitride semiconductor electronic devices. It will be the first system in China ...
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