Peregrine Semiconductor Corp of San Diego, CA, USA – a fabless provider of radio-frequency integrated circuits (RFICs) based on silicon-on-insulator (SOI) – has launched what it claims is the fastest gallium nitride (GaN) ...
Tags: Peregrine, GaN FET Driver
Ghent University/IMEC in Belgium and X-Celeprint in Ireland/USA claim "the first III-V optoelectronic components transfer printed on and coupled to a silicon photonic integrated circuit" [Andreas De Groote et al, Optics Express, vol24, ...
By the end of 2016, more than half of all new automotive 77GHz radar systems worldwide will be equipped with chips from Munich-based Infineon Technologies AG, meaning that about one in 15 new cars will use a driver assistance system using ...
Just because it has been around for 75 years, doesn’t mean Swedish camera maker Hasselblad is too old to learn new tricks. The manufacturer is celebrating its landmark anniversary by introducing the world’s first mirrorless, ...
Researchers in Hong Kong and USA have been working on producing optically pumped micro-disk lasers on exact (001) silicon [Yating Wan et al, Appl. Phys. Lett., vol108, p221101, 2016]. The team from Hong Kong University of Science and ...
A new highly efficient power amplifier (PA) based on silicon-on-insulator (SOI) CMOS could help to make possible next-generation cell phones, low-cost collision-avoidance radar for cars and lightweight microsatellites for communications, ...
Tags: Power Amplifier, Cell Phones
Solmates of Science Park Twente in Enschede, The Netherlands (a spin-off from the MESA+ Institute of Nanotechnology) has received an order for one of its pulsed laser deposition (PLD) equipment systems from nanoelectronics research center ...
ACCO Semiconductor Inc of Sunnyvale, CA, USA, a fabless provider of RF front-end components manufactured using standard high-volume bulk CMOS processes for smart-phone and Internet of Things (IoT) applications, has closed a $35m funding ...
Tags: CMOS PAs GaAs PAs
Researchers in Hong Kong and USA have developed indium arsenide (InAs) quantum dot (QD) microdisk lasers directly integrated on silicon (Si) with performance comparable to the best reported for similar devices on gallium arsenide (GaAs) ...
Tags: InAs quantum dot microdisk lasers InAs GaAs substrates
Specialty foundry TowerJazz (which has fabrication plants at Tower Semiconductor Ltd in Migdal Haemek, Israel, and at its subsidiaries Jazz Semiconductor Inc in Newport Beach, CA, USA and TowerJazz Japan Ltd) has announced its SiGe Terabit ...
Tags: TowerJazz RF CMOS SiGe
Rearchers in China claim the first radio frequency (RF) switch device based on indium gallium arsenide (InGaAs)-channel metal-oxide-semiconductor field-effect transistor (MOSFET) technology [Zhou Jiahui et al, J. Semicond. 2016, vol37, ...
Tags: InGaAs MOSFET RF switch
Observing the launches of consumer digital still cameras (DSC) scheduled in spring 2016, the number of models is 30% less than the same period a year ago. The top-two vendors, Nikon and Canon, each have three models fewer, while Sony and ...
Tags: Digital Cameras, Cameras
NeoPhotonics Corp of San Jose, CA, USA (a vertically integrated designer and manufacturer of hybrid photonic integrated optoelectronic modules and subsystems for high-speed communications networks) has announced its 400G transceiver ...
Tags: NeoPhotonics, PICs
In booth 1655 at the Applied Power Electronics Conference & Exposition (APEC 2016) in Long Beach, CA, USA (20–24 March), Monolith Semiconductor Inc of Round Rock, TX, USA is demonstrating its fast-switching silicon carbide (SiC) ...
Tags: SiC MOSFET, SiC Schottky barrier diodes, SiC power devices
Researchers in the UK have claimed the first demonstration of laser diodes grown directly on silicon that perform up to 75°C and 120°C under continuous wave (cw) and pulsed operation, respectively [Siming Chen et al, Nature ...
Tags: Quantum dot lasers, GaAs, Silicon substrate, MBE