InGaAs MOSFET RF switch

Indium Gallium Arsenide MOSFET Used as Radio-Frequency Switch
Mar 30, 2016
Rearchers in China claim the first radio frequency (RF) switch device based on indium gallium arsenide (InGaAs)-channel metal-oxide-semiconductor field-effect transistor (MOSFET) technology [Zhou Jiahui et al, J. Semicond. 2016, vol37, ...

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