Sophia University in Japan has developed a technique for growing laser diodes on an indium phosphide (InP) layer bonded to silicon (Si) [Keiichi Matsumoto et al, Appl. Phys. Express, vol9, p062701, 2016]. The researchers claim that this is ...
Tags: Laser Diodes, Si Substrates
Researchers in Hong Kong and China have claimed the first demonstration of gallium nitirde (GaN) fully vertical p-type-intrinsic-n-type (p-i-n) junction diodes on silicon (Si) [Xinbo Zou et al, IEEE Electron Device Letters, published online ...
Tags: GaN devices, Silicon Substrate
Semiconductor process equipment maker SAMCO Inc of Kyoto, Japan is employing about 20 more people at its locations in North America, China, Taiwan and Singapore, as well as its subsidiary Samco-UCP in Liechtenstein, in order to better ...
Tags: Samco
Researchers in France claim the first demonstration of 10GHz large-signal microwave power performance for flexible aluminium gallium nitride (AlGaN) barrier high-electron-mobility transistors (HEMTs) [S. Mhedhbi et al, IEEE Electron Device ...
Deposition equipment maker Aixtron SE of Herzogenrath, near Aachen, Germany says that UK-based Plessey Semiconductors Ltd has ordered an AIX G5+ C cluster system (for delivery in third-quarter 2016) to expand its production capacity for ...
SPTS Technologies Ltd of Newport, Wales, UK (an Orbotech company that manufactures etch, PVD and CVD wafer processing solutions for the MEMS, advanced packaging, LED, high-speed RF on GaAs, and power management device markets) has been ...
Tags: SPTS, ESTnet Awards
Epitaxial deposition and process equipment maker Veeco Instruments Inc of Plainview, NY, USA has received multiple orders from a leading foundry in Asia for its Precision Surface Processing (PSP) WaferStorm system (a platform that provides ...
Tags: Veeco Wet processing, Veeco Instruments Inc, Electronics
Veeco Instruments has received multiple orders from a leading foundry in Asia for its Precision Surface Processing (PSP) WaferStorm system. The WaferStorm platform provides wafer processing solutions for advanced packaging applications. ...
Tags: Veeco Instruments, Fan-out Wafer Level Packaging, Packaging
SAMCO Inc of Kyoto, Japan, a supplier of plasma etch, chemical vapour deposition (CVD) and surface treatment systems to compound semiconductors device makers, has launched an atomic layer deposition (ALD) system focusing on gate oxide ...
Université Grenoble Alpes in France and Applied Materials in the USA have been developing techniques to grow gallium arsenide (GaAs) on silicon substrates with a small offcut angle [Y. Bogumilowicz et al, Appl. Phys. Lett., vol107, ...
Tags: GaAs, Quasi-Nominal Silicon, MOVPE
Plasma process equipment maker Plasma-Therm LLC of St Petersburg, FL, USA says that a new Apex SLR ICP (inductively coupled plasma) etch system from its Advanced Vacuum division in Lomma, Sweden (which supplies vacuum solutions including ...
Tags: Apex SLR ICP
Plessey Semiconductors Ltd in the UK has been improving its indium gallium nitride (InGaN)-on-silicon light-emitting diode (LED) technology [Liyang Zhang et al, Journal of the Electron Devices Society, vol3, p457, 2015]. A light output ...
Tags: GaN-on-silicon LEDs, Plessey MOCVD
Researchers based in USA have been studying performance improvements in aluminium gallium nitride (AlGaN) ultraviolet (UV) avalanche photodiodes (APDs) gained from using free-standing gallium nitride substrates instead of gallium nitride on ...
Tags: AlGaN, Ultraviolet photodetectors, HVPE
Researchers in the USA have reduced current leakage for aluminium gallium nitride (AlGaN) high-electron-mobility transistors (HEMTs) on silicon to the level achieved for devices produced on much more expensive silicon carbide [Bo Song et ...
Tags: AlGaN, transistors, Silicon
Sandia National Laboratories in the USA has reported aluminium gallium nitride (AlGaN) laser structures emitting ~350nm ultraviolet radiation from optical and electrical pumping [Mary H. Crawford et al, Appl. Phys. Express, vol8, p112702, ...
Tags: AlGaN, ultraviolet lasers, LEDs