John Bowers, a professor of electrical and computer engineering and of materials at University of California Santa Barbara (UCSB), has been selected to receive the 2017 Institute of Electrical and Electronics Engineers (IEEE) Photonics ...
Tags: Integrated Photonics, PICs
Due to falling prices and the commercial availability of wide-bandgap (WBG) semiconductor power devices from multiple sources, the adoption of silicon carbide (SiC) and gallium nitride (GaN) power devices in power supplies for computers, ...
Tags: Semiconductor, GaN power devices
Toyoda Gosei Co Ltd of Kiyosu, Aichi Prefecture, Japan has developed what is claimed to be the first 1.2kV-class power semiconductor device chip capable of large-current operation exceeding 20A. Picture: Forward current–voltage ...
At a ceremony at the UK Engineering and Physical Sciences Research Council (EPSRC) National Centre for Power Electronics Annual Conference 2016 in Nottingham, UK, a post-graduate team from Imperial College London received the £2000 ...
Tags: GaN Systems, power conversion
Rensselaer Polytechnic Institute and General Electric Global Research Center in the USA "experimentally demonstrate, for the first time, bi-directional 4H-silicon carbide planar gate, insulated-gate bipolar transistors (IGBTs) fabricated on ...
Tags: Bipolar Transistor
At the IEEE Honors Ceremony in New York City on 18 June, Dr David F. Welch - co-founder & president of Infinera Corp of Sunnyvale, CA, USA, a vertically integrated manufacturer of digital optical transport networking systems incorporating ...
Tags: Infinera, PICs, digital optical transport networking systems
Researchers at Hong Kong University of Science and Technology (HKUST) are proposing using III-nitride and silicon carbide (SiC) hybrid technologies for high-voltage power devices [Jin Wei et al, IEEE Transactions on Electron Devices, vol63, ...
Researchers based in Taiwan and USA have increased the modulation bandwidth of indium gallium nitride (InGaN) light-emitting diodes (LEDs) [Jin-Wei Shi, IEEE Electron Device Letters, published online 26 May 2016]. The enhanced bandwidth was ...
Zebra Technologies Corporation has unveiled its new ZD400-series desktop thermal printers. Designed for retail, transportation and logistics, manufacturing, and healthcare industries, the ZD400-series is flexible and user-friendly, making ...
MACOM Technology Solutions Holdings Inc of Lowell, MA, USA (which makes semiconductors, components and subassemblies for analog RF, microwave, millimeter-wave and photonic applications) has commenced sample shipments of its MAMF-011057 and ...
Diamond Microwave Devices Ltd of Leeds, UK (which specializes in high-performance microwave power amplifiers) has launched a range of X-band gallium nitride (GaN)-based pulsed solid-state power amplifiers (SSPA) offering integrated ...
Tags: GaN-on-diamond, radar application
At the IEEE International Microwave Symposium (IMS 2016) in San Francisco (24-26 May), the current state of the RF Energy Alliance (RFEA) and the impact it has made in its first two years is being showcased by its executive director Dr ...
Tags: RF Energy, Electronics
Skyworks Solutions Inc of Woburn, MA, USA (which manufactures analog and mixed-signal semiconductors) has launched a suite of high-performance amplifiers specifically addressing the rapidly growing small-cell infrastructure market. As ...
Tags: Skyworks, semiconductors
RJR Technologies Inc of Oakland, CA, USA, a developer and high-volume manufacturer of air-cavity plastic (ACP) semiconductor packaging for RF and microwave markets, has shipped over 10 million ACP packages, reflecting the increasing use of ...
A new highly efficient power amplifier (PA) based on silicon-on-insulator (SOI) CMOS could help to make possible next-generation cell phones, low-cost collision-avoidance radar for cars and lightweight microsatellites for communications, ...
Tags: Power Amplifier, Cell Phones