Bipolar Transistor articles & resources on Made-in-China.com

ROHM Supplying Full-SiC Power Modules to Venturi Formula E Racing Team

Dec 5, 2017

ROHM of Kyoto, Japan is to provide full-SiC (silicon carbide) power modules to the VENTURI Formula E team during season 4 (2017–2018) of FIA Formula E (the world’s first formula racing championship for all-electric vehicles), ...

Tags: Power Modules, silicon carbide

TSMC Profits From Surging Market Demand for Chips in Auto Application

Oct 9, 2017

Market insiders noted that TSMC (Taiwan Semiconductor Manufacturing Co.), the world's largest semiconductor foundry headquartered in Taiwan, will see a strong revenue performance as the firm won massive orders from multinational ...

Tags: TSMC, semiconductor

Analog Devices Launches Small Isolated Gate Drivers for SiCand GaN Power Switch Technology

May 25, 2017

Analog Devices Inc (ADI) of Norwood, MA, USA has launched small-form-factor isolated gate drivers designed for the higher switching speeds and system size constraints required by power switch technologies such as silicon carbide (SiC) and ...

Tags: Analog Devices, GaN Power

Rohm Expands Full-SiC Power Module Lineup

May 23, 2017

Japan’s ROHM Semiconductor has developed 1200V 400A/600A-rated full-silicon carbide (SiC) power modules [BSM400D12P3G002/BSM600D12P3G001] - available in June (for samples and OEM quantities) - optimized for inverters and converters in ...

Tags: power modules, Semiconductor

Pasternack Launches High-Rel RF Frequency Dividers Spanning 0.5-18GHz

Aug 30, 2016

Pasternack Inc of Irvine, CA, USA (which makes both passive and active RF, microwave and millimeter-wave products) has launched a line of high-rel frequency dividers that cover wide frequency bandwidths from 0.5 to 18GHz and are available ...

Tags: Pasternack, high-rel frequency dividers

Bi-Directional Silicon Carbide Planar Insulated-Gate Bipolar Transistor

Jul 5, 2016

Rensselaer Polytechnic Institute and General Electric Global Research Center in the USA "experimentally demonstrate, for the first time, bi-directional 4H-silicon carbide planar gate, insulated-gate bipolar transistors (IGBTs) fabricated on ...

Tags: Bipolar Transistor

Wolfspeed Launches All-SiC Half-Bridge Power Module & Gate Driver Combination

May 11, 2016

In booth 9-242 at PCIM (Power Conversion Intelligent Motion) Europe 2016 in Nuremburg, Germany (10–12 May), Wolfspeed of Research Triangle Park, NC, USA — a Cree Company that makes silicon carbide (SiC) power products including ...

Tags: Power Module, Gate Driver

Rohm Showcasing New Third-Generation 650V SiC Schottkys and 1200V/180A Full-SiC Modules at PCIM

Apr 21, 2016

In hall 9, booth 316 at PCIM (Power Conversion Intelligent Motion) Europe 2016 in Nuremberg, Germany (10-12 May), Japan's Rohm Semiconductor is showcasing its latest power products for high-speed switching and high-power performance, while ...

Tags: Rohm SiC Schottky barrier diodes SiC power MOSFET

GaAs IC Market Grows 25% in 2015

Feb 6, 2016

Strong wireless demand resulted in growth of more than 25% in the gallium arsenide (GaAs) IC market in 2015, according to The Information Network in its report 'The GaAs IC Market'. Every cell phone contains power amplifiers (PA), ...

Tags: GaAs IC Market, PA

Rohm Expands Full-Sic Power Module Lineup with 1200V/300A Model for High-Power Inverters and Converters in Solar Power Conditioners and Industrial Equipment

Dec 2, 2015

Power semiconductor device manufacturer Rohm Co Ltd of Kyoto, Japan has developed a 1200V/300A full-SiC (silicon carbide) power module - integrating a SiC-SBD (Schottky barrier diode) and SiC-MOSFET (metal-oxide-semiconductor field-effect ...

Tags: Rohm, SiC Schottky barrier diodes, SiC power MOSFET

Firecomms Adds 5MB Redlink Optical Receivers with Temperature Range Extended to 95°C for Industrial Applications

Nov 24, 2015

Firecomms Ltd of Cork, Ireland and Tongxiang, China (which manufactures fiber-optic solutions and optical transceivers for communications networks) has launched a range of 5Mb RedLink fiber optic receivers with an extended temperature ...

Tags: Firecomms, Optical transceivers, IGBT driver

Silicon Carbide Chip Business Was Worth More Than $133m

Aug 4, 2015

According to the report 'GaN and SiC for power electronics applications' from Yole Développement, in 2014 the silicon carbide (SiC) chip business was worth more than $133m, with power factor correction (PFC) and photovoltaics (PV) ...

Tags: SiC Market, power electronics

X-FAB Has Announced The First Cost-Efficient 180nm SOI Technology

Jul 7, 2015

X-FAB Silicon Foundries AG of Erfurt, Germany - an analog/mixed-signal and micro-electro-mechanical systems (MEMS) foundry - has announced what it claims is the first cost-efficient 180nm silicon-on-insulator (SOI) technology for automotive ...

Tags: X-FAB, SOI, electrical components

Japan's Rohm Started Mass Production of Silicon Carbide Mosfet

Jun 9, 2015

Japan's Rohm Co Ltd has started mass production of what it claims is the first silicon carbide (SiC) MOSFET (metal-oxide-semiconductor field-effect transistor) with a trench structure (where the gate is formed on the sidewall of a groove in ...

Tags: ROHM Semiconductor SiC power MOSFET, Sic Mosfet

Vishay Intertechnology Announced Its Technology Lineup for The APEC 2015

Mar 12, 2015

Vishay Intertechnology, Inc. (NYSE: VSH) today announced its technology lineup for the Applied Power Electronics Conference and Exposition (APEC) 2015, taking place March 15-19 in Charlotte, North Carolina. In booth 501, the company will ...

Tags: Vishay, APEC 2015, power MOSFET

Bipolar Transistor

Related Products