Integrated passive device maker OnChip Devices Inc of Santa Clara, CA, USA says that its wafer fabrication facility is offering backside metallization (BSM) of thin films for applications such as military, medical, and instrumentation. ...
Tags: Sputtering, HB-LEDs, GaN-on-Si, Wafer bonding
Nissan announced pricing of $109,990 for the new 2017 Nissan GT-R Premium model, which goes on sale beginning in mid-July at select Nissan dealers in US. The 2017 Nissan GT-R represents the most significant makeover to the iconic supercar ...
Tags: Nissan, GT-R Premium model
Owens Corning (OC) has acquired InterWrap, a British Columbia based manufacturer of roofing underlayment and packaging materials, for $450m. InterWrap, through its facilities in the US, Canada, India and China, produces synthetic roofing ...
Tags: Owens Corning, InterWrap
Researchers based in China, Singapore and Turkey have used an extremely thin layer of silicon dioxide (SiO2) insulator as a charge inverter in indium gallium nitride (InGaN) light-emitting diodes (LEDs), improving light output power and ...
Researchers in France claim the first demonstration of 10GHz large-signal microwave power performance for flexible aluminium gallium nitride (AlGaN) barrier high-electron-mobility transistors (HEMTs) [S. Mhedhbi et al, IEEE Electron Device ...
The universities of Virginia and of Texas in the USA have been developing avalanche photodiodes (APDs) based on aluminium indium arsenide antimonide (AlInAsSb) alloys. Two papers from the group detail the implementation of a staircase ...
Ford Escape models can now be equipped to help taking away winter headache to maintain clear windshield. No more wiper blades freezing to the glass. And the funny-looking parking lot ritual of pulling wipers off the windshield and ...
Tags: Ford Escape, Wiper De-Icer, SUV
Researchers in Korea have been developing improved non-alloyed contacts for gallium arsenide (GaAs) complementary metal-oxide-semiconductor (CMOS) and high-electron-mobility transistors (HEMTs) [Seung-Hwan Kim et al, IEEE Electron Device ...
Optomec will feature its LENS 3D Printers for metal additive manufacturing applications at the Laser Additive Manufacturing (LAM) Conference in Orlando, Florida, US. Jim Cann, LENS Business Development Manager for Optomec, will give a ...
Tags: Optomec, LENS 3D Printers, LAM, Metal additive manufacturing
University of California Santa Barbara (UCSB) in the USA has been developing a hybrid technique to create III-nitride tunnel junctions (TJs) using a combination of metal-organic chemical vapor deposition (MOCVD) and molecular beam epitaxy ...
Tags: Gallium Nitride Tunnel, Hybrid
In booth 2712 (Hall A) at SEMICON Korea 2016 in Seoul (27-29 January), Advanced Energy Industries Inc of Fort Collins, CO, USA is highlighting its power and control technologies. Among its process power, high-voltage power and thermal ...
China's production of 10 major non-ferrous metals in November grew at a slower pace than a year ago, the top economic planner said Sunday. Output of non-ferrous metals grew 1.4 percent year on year in November, down by 6.5 percentage ...
Tags: Non-Ferrous Metal, Metals
Huawei Marine Networks is looking to construct a Cameroon-Brazil Cable System (CBCS), connecting Africa to Latin America. The project is invested by CamTel, China Unicom and Telefónica, who will support the initiative by providing ...
Plessey Semiconductors Ltd in the UK has been improving its indium gallium nitride (InGaN)-on-silicon light-emitting diode (LED) technology [Liyang Zhang et al, Journal of the Electron Devices Society, vol3, p457, 2015]. A light output ...
Tags: GaN-on-silicon LEDs, Plessey MOCVD
Researchers based in USA have been studying performance improvements in aluminium gallium nitride (AlGaN) ultraviolet (UV) avalanche photodiodes (APDs) gained from using free-standing gallium nitride substrates instead of gallium nitride on ...
Tags: AlGaN, Ultraviolet photodetectors, HVPE