SemiSouth Laboratories Inc of Starkville, MS, USA (which designs and manufactures silicon carbide device for high-power, high-efficiency, harsh-environment power management and conversion applications) has launched a 1700V/1400m ...
Tags: SemiSouth, power supplies, USA
SemiSouth Laboratories Inc of Starkville, MS, USA (which designs and manufactures silicon carbide devices for high-power, high-efficiency, harsh-environment power management and conversion applications) has been granted its 30th US patent ...
11 May 2012 Record transconductance of 1105mS/mm for GaN/InAlN MIS-HFET University of California Santa Barbara(UCSB)has produced gate-first self-aligned metal-insulator-semiconductor heterostructure field-effect ...
Tags: GaN/InAlN, MIS-HFET, UCSB, semiconductor material
Dow Corning of Auburn,MI,USA has extended its silicon carbide(SiC)epitaxy capability with an order for two additional AIX 2800G4 WW Planetary Reactor platforms from Aixtron SE of Herzogenrath,Germany,due to be commissioned in Q2/2012.The ...
Tags: DowCorning, SiCepitaxy, Aixtron, WW Planetary
Researchers at Ukraine's Lashkaryov Institute of Semiconductor Physics have been studying current crowding and electrical efficiency degradation in vertical indium gallium nitride(InGaN)light-emitting diodes(LEDs)made from material grown on ...
Tags: Vertical InGaN/SiC LEDs, SiC substrates, massive heat sink
In Hall 12,booth 404 at the PCIM Europe 2012 trade show in Nuremberg,Germany(8-10 May),power semiconductor manufacturer Infineon Technologies has launched its new CoolSiC 1200V silicon carbide(SiC)JFET family which,the firm says,takes ...
Tags: Infineon, SiC JFETs, Solar inverters, CoolSiC technology
GE Aviation(an operating unit of GE)has expanded its location in Pompano Beach,FL,USA,which was established in 1965 and whose 40 staff design and manufacture special application electronic power subsystems for military and ...
Tags: GE, SIC, Development
Plessey Semiconductor Ltd. (UK) has acquired CamGaN Limited, a University of Cambridge spin-out with novel gallium nitride (GaN) technology for high-brightness light-emitting diodes (HB-LEDs) fabricated on large-area silicon substrates. ...
Tags: Market View, raw material
Plessey Semiconductor Ltd. (UK) has acquired CamGaN Limited, a University of Cambridge spin-out with novel gallium nitride (GaN) technology for high-brightness light-emitting diodes (HB-LEDs) fabricated on large-area silicon substrates. ...
Tags: raw material
Wright Express Corp., a provider of value-based business payment processing and information management solutions, in collaboration with IHS, a global source of information and analysis, has released results of its Wright Express ...
Tags: market view, construction industry
Cree Japan, a Japanese unit of Cree Inc, introduced the "XLamp XB-D," a white LED lamp that is smaller and brighter than the company's former product. The LED lamp was exhibited at the 4th LED/OLED Lighting Technology Expo, which took ...
Tags: led
Cree Japan, a Japanese unit of Cree Inc, introduced the "XLamp XB-D," a white LED lamp that is smaller and brighter than the company's former product. The LED lamp was exhibited at the 4th LED/OLED Lighting Technology Expo, which took place ...
Tags: Market View, led
With the small-footprint XB-D LED, Cree intends to lower the cost, in terms of lumens per dollar, for SSL lamp and luminaire designs. Cree has announced the new XLamp XB-D LED family that features components measuring 2.45x2.45 mm, that the ...
Tags: Market View, led
Barclays Capital forecasts 2012 as a "subdued year" for the light-emitting diode (LED) industry, plagued by overcapacity, average selling price (ASP) pressures, and only gradual growth in LED lighting demand. Metal organic chemical vapor ...
Tags: Market View, led
Existing size of the abrasives industry, manufacturers of about 2000, of which 80% of private enterprises. Total industry economies of scale (current output) 218 billion yuan. According to incomplete statistics, the national capacity of 300 ...
Tags: abrasives, coping strategies, Hardware