UK-based Plessey has announced a further move to aligning operations to its expanding facility in Plymouth by adding an LED assembly line. The line should enable the firm to focus on its high-brightness LED growth plans based around its ...
Tags: Plessey, Assembly Line, Electrical
Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA, which makes enhancement-mode gallium nitride on silicon (eGaN) power field-effect transistors (FETs) for power management applications, has launched the EPC2100, the first ...
Tags: EPC, EPC2100, Electrical
An interdisciplinary team at the US Naval Research Laboratory (NRL) has received the Japan Society of Applied Physics’ 2014 Outstanding Paper Award. The award is only given to a select group of papers that present excellent ...
Tags: NRL, Award, Electronics
Soraa Inc of Fremont, CA, USA, which develops solid-state lighting technology built on ‘GaN on GaN’ (gallium nitride on gallium nitride) substrates, has announced new psychophysical research proving that whiteness and color ...
Tags: Whiteness, Color Rendering, Electronics
RF Micro Devices Inc of Greensboro, NC, USA has unveiled 11 new amplifiers, of which six are gallium nitride (GaN)-based products to support the requirements of the new data over cable service interface specification (DOCSIS) 3.1. RFMD is ...
Tags: RFMD, 3.1 Cable Networking, Electronics
In booth 419 at the IEEE Energy Conversion Congress & Expo (ECCE 2014) in Pittsburgh, PA, USA (14–18 September), GaN Systems Inc of Ottawa, Ontario, Canada, a fabless developer of gallium nitride (GaN)-based power switching ...
Based on its recent analysis of the gallium nitride (GaN)-based devices market, Frost & Sullivan has recognized Advantech Wireless of Montreal, Canada (which manufactures satellite, RF equipment and microwave systems) with the 2014 North ...
Tags: Wireless'GaN Devices, Electronics
Magnetic components and assembly designer and manufacturer Precision Inc of Minneapolis, MN, USA has launched its gallium nitride (GaN)-ready magnetic capabilities. GaN-ready LLC transformers and PFC inductors are now available for ...
Toshiba Electronics Europe of Düsseldorf, Germany (TEE, the European electronic components business of Tokyo-based Toshiba Corp) has extended its LETERAS family of white LEDs with a new series of ultra-compact devices that combine ...
Tags: Toshiba GaN-on-Si LEDs, Electrical, Electronics, LED
Spending on microwave RF power semiconductors will rise to more than $300m by 2019 as the availability of new gallium nitride (GaN) devices for 4-18GHz becomes more pervasive, according to the report 'Microwave RF Power Semiconductors' from ...
Tags: ABI RF power semiconductors GaN, Electrical, Electronics
Epiluvac AB of Lund, Sweden says that it is now offering silicon carbide (SiC) chemical vapor deposition (CVD) epitaxy reactors in various configurations. As one of the most interesting semiconductor materials in electrical power ...
Meijo and Nagoya universities in Japan have developed a laser lift-off (LLO) technique for removing gallium nitride (GaN) substrates from ultraviolet (UV) light-emitting diodes (LEDs) to improve light extraction efficiency [Daisuke Iida et ...
GaN Systems Inc of Ottawa, Ontario, Canada, a fabless developer of gallium nitride (GaN)-based power switching semiconductors for power conversion and control applications, has signed an exclusive worldwide distribution agreement with ...
Tags: GaN Systems, Power electronics
LED maker Changelight Co Ltd of Xiamen, China plans to issue 6.07 million stocks to raise a total of RMB800m ($130.39m) in financing in order to expand its production of indium gallium nitride (InGaN) LED epitaxial wafers, according to ...
Epitaxial deposition and process equipment maker Veeco Instruments Inc of Plainview, NY, USA has launched the TurboDisc EPIK700 gallium nitride (GaN) metal-organic chemical vapor deposition (MOCVD) system, which combines what are reckoned ...
Tags: Veeco MOCVD GaN HB-LEDs