Nitronex LLC of Durham, NC, USA, which designs and makes gallium nitride on silicon (GaN-on-Si)-based RF power transistors for the defense, communications, broadband and industrial & scientific markets, has developed a family of products ...
Northrop Grumman Corp of Redondo Beach, CA, USA has developed a new gallium nitride (GaN) flange-packaged power amplifier targeting military and commercial Ka-band communication applications. The APN180FP represents the first commercial ...
Tags: Northrop Grumman, GaN HEMTs
RF Micro Devices Inc of Greensboro, NC, USA has launched a broadband, microwave voltage-controlled attenuator. The RFSA2113 provides a complete monolithic solution in a small 3mm x 3mm QFN package and operates over a frequency range of ...
Tags: RFMD Attenuators, Power Control
In booth 2120 at the IEEE MTT-S International Microwave Symposium (IMS 2013) in Seattle (4–7 June), wireless and optical communications component and module provider Sumitomo Electric Device Innovations USA Inc of San Jose, CA, USA ...
In booth 2120 at the IEEE MTT-S International Microwave Symposium (IMS 2013) in Seattle (4–7 June), wireless and optical communications component and module provider Sumitomo Electric Device Innovations USA Inc of San Jose, CA, USA ...
Toshiba America Electronic Components Inc (TAEC) - a subsidiary of Tokyo-based semiconductor maker Toshiba Corp – has expanded its gallium nitride high-electron-mobility transistor (GaN HEMT) lineup with the addition of three new ...
Tags: Toshiba, Satcom Market
Toshiba America Electronic Components Inc (TAEC) - a subsidiary of Tokyo-based semiconductor maker Toshiba Corp - has added a 200W C-band gallium nitride (GaN) high-electron-mobility transistor (HEMT) to its power amplifier product family. ...
Tags: Toshiba, Power Amplifier
Avago Technologies Ltd of San Jose, CA, USA and Singapore, a supplier of analog interface components for wireless, wireline and industrial applications, has announced two RF power amplifiers (PAs), the MGA-43728 and MGA-43828, and a WiFi ...
Tags: Small-Cell Base, Electrical
In booth #930 at the IEEE MTT International Microwave Symposium (IMS 2013) in Seattle (4-6 June), M/A-COM Technology Solutions Inc of Lowell, MA, USA (which makes analog semiconductors, components and subassemblies) has launched a broadband ...
Tags: Macom, Broadband VGA
AWR Corp of El Segundo, CA, USA, which supplies electronic design automation (EDA) software for designing RF and high-frequency components and systems, and Modelithics Inc of Tampa, FL, USA, which provides simulation models for RF, ...
Tags: EDA Software, Electrical
Analog semiconductor maker Skyworks Solutions Inc of Woburn, MA, USA has unveiled a portfolio of low-noise amplifiers (LNAs) that provide what is claimed to be best-in-class noise figure (a critical component to boosting weak incoming ...
Tags: Skyworks, GaAs Phemt LNAs
Cree Inc of Durham, NC, USA says it has now surpassed the milestone of shipping more than 2 million gallium nitride (GaN) high-electron-mobility transistors (HEMTs) for cellular telecommunications, providing benefits over traditional ...
Tags: Cree, Telecom Infrastructure
MicroWave Technology Inc (MwT) of Fremont, CA, USA, the RF division of IXYS Corp that makes microwave devices, MMICs, hybrid modules and connecterized amplifiers for wireless communication infrastructure, military/aerospace, industrial and ...
Tags: Amplifier, Electrical, Electronics, MicroWave Technology
GigOptix Inc of San Jose, CA, USA (a fabless supplier of analog semiconductor and optical communications components enabling high-speed end-to-end information streaming over optical fiber and wireless networks) says that it has demonstrated ...
Tags: GigOptix, Electrical, Electronics
GaAs-based broadband wireless and wireline communications component maker Anadigics Inc of Warren, NJ, USA has introduced a new style of RF power amplifier (PA) optimized to power 3G and 4G small-cell base-stations. Paired with digital or ...
Tags: Anadigics, Electrical, Electronics