In booth #1515 at the IEEE MTT-S International Microwave Symposium (IMS 2014), API Technologies Corp of Orlando, FL, USA, a designer and manufacturer of systems, subsystems, modules and components for RF, microwave, millimeter-wave, ...
In booth #1933B at the LightFair International 2014 exhibition in Las Vegas (3-5 June), LatticePower of Nanchang, Jiangxi Province, China – which claims to be the first firm to commercialize gallium nitride on silicon (GaN-on-Si) LEDs ...
Plessey Semiconductors Ltd of Plymouth, UK has entered into a distribution agreement with electronics distributor Comprel Srl of Nova Milanese, Italy to expand its European network with coverage in the Italian market for its gallium nitride ...
Tags: Comprel, GaN-on-Si LEDs
Peregrine Semiconductor Corp of San Diego, CA, USA has unveiled a new line of UltraCMOS monolithic phase & amplitude controllers (MPAC) for Doherty amplifiers used in wireless base-station transmission. The company presented its devices at ...
Tags: Peregrine, Ultracmos Challenge
In booth #7718 at the LightFair International 2014 event in Las Vegas (3-5 June), Soraa Inc of Fremont, CA, USA, which develops solid-state lighting technology built on ‘GaN on GaN’ (gallium nitride on gallium nitride) ...
Tags: Soraa, GaN-on-GaN, LED Lamps
Microsemi Corp of Aliso Viejo, CA, USA (which designs and makes analog and RF devices, mixed-signal integrated circuits and subsystems) has announced its entry into the monolithic microwave integrated circuit (MMIC) market. Building on ...
Tags: Microsemi MMIC, MMIC Market
They successfully developed 560 mW high-power UV LED and their strategy is to take the dominant position in UV LED market which has a higher technical barrier. LG Innotech announced on the 20th that they succeeded in the development of a ...
Some says “if it can be made on Silicon, it will be made on silicon”. Is that true for GaN too? And if so, can it be applied in all GaN-based applications: LED, power, RF and laser?… Yole Développement (Yole) ...
Tags: GaN-on-Si, Power Electronics
The need for high-power, high-frequency transistors is increasing steadily, commensurate with the huge demand for wireless telecommunications, notes market research firm Yole Développement in its report ‘RF GaN Technology & ...
Researchers in Taiwan have produced zinc oxide/gallium nitride (ZnO/GaN) nano-rod light-emitting diodes [Ya-Ju Lee et al, APL Mater. vol2, p056101, 2014]. The researchers avoided complicated polymer processing by using a shadowing effect to ...
Tags: LED Fabrication, Zinc Oxide
Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA, which makes enhancement-mode gallium nitride on silicon (eGaN) power field-effect transistors (FETs) for power management applications, has introduced DrGaNPLUS evaluation ...
Tags: Half-Bridge Converter, Electronics
Researchers in Germany have developed two-dimensional hole gas (2DHG) gallium nitride (GaN) channel structures with record mobility [B Reuters et al, J. Phys. D: Appl. Phys., vol47, p175103, 2014]. Mobility for 2DHGs in GaN is usually ...
Tags: Electrical, Electronics
Plessey Semiconductors Ltd of Plymouth, UK has entered into a distribution agreement with Netherlands-based electronics distributor Alcom Electronics B.V. to expand its European network with coverage in the Benelux market for its gallium ...
Tags: GaN-on-Si HB-LEDs, LED, Electrical, Electronics
In booth #7718 at the LightFair International 2014 event in Las Vegas (3-5 June), Soraa Inc of Fremont, CA, USA, which develops solid-state lighting technology built on 'GaN on GaN' (gallium nitride on gallium nitride) substrates, is ...
Tags: Soraa GaN-on-GaN, LED Lamp
Cree Inc of Durham, NC, USA has introduced what it claims are the industry’s highest-power continuous wave (CW) RF gallium nitride (GaN) high-electron-mobility transistors (HEMTs) packaged in a dual-flat no-leads (DFN) format. ...
Tags: GaN Transistors, CREE