Institute of Electronic, Microelectronic and Nanotechnology (IEMN) in France and EpiGaN nv in Belgium have claimed a record combination of specific on-resistance and breakdown voltage for a double heterostructure field-effect transistor ...
The global market for power discrete devices will rise at a compound annual growth rate (CAGR) of 8.43% over 2013-2018, forecasts a new report from TechNavio (the market research platform of Infiniti Research Ltd). According to the ...
GT Advanced Technologies Inc of Nashua, NH, USA (a provider of polysilicon production technology as well as sapphire and silicon crystal growth systems and materials for the solar, LED and electronics markets) has acquired exclusive rights ...
Tags: LED Wafer Production, epiwafers
Driven by surging demand from the lighting, tablet and cellphone backlighting segments, global revenue for gallium nitride (GaN) light-emitting diodes (LEDs) rose 10.6% from $11.2bn in 2012 to $12.4bn in 2013, but this could mark the last ...
Tags: GaN LED, LED Market
M/A-COM Technology Solutions Inc of Lowell, MA, USA (which makes semiconductors, components and subassemblies for analog, RF, microwave and millimeter-wave applications) has acquired Nitronex LLC of Durham, NC, USA, which designs and makes ...
Tags: GaN technology, MACOM
In booth #11 F63 at the EuroShop event in Dusseldorf, Germany (16-20 February), Soraa Inc of Fremont, CA, USA, which develops solid-state lighting technology built on ‘GaN on GaN’ (gallium nitride on gallium nitride) substrates, ...
Tags: Soraa GaN-on-GaN, LED AR111 Lamps
Researchers associated with Taiwan National Central University and Epistar Corp are developing a method to transfer indium gallium nitride (InGaN) light-emitting diodes (LEDs) to ceramic aluminium nitride (AlN) substrates for high-voltage ...
Tags: InGaN LED, Ceramic Substrate
Soraa Inc of Fremont, CA, USA, which develops solid-state lighting technology built on ‘GaN on GaN’ (gallium nitride on gallium nitride) substrates, has launched what it claims are the first high correlated color temperature ...
Tags: MR16 LED Lamps, LEDs
University of Notre Dame (UND) is developing gallium nitride (GaN) quantum dots in aluminium nitride (AlN) as a route to deep ultraviolet (UV) light-emitting diodes (LEDs) [Jai Verma et al, Appl. Phys. Lett., v104, p021105, 2014]. ...
Tags: UV Light Emission, LEDs
Global electronic components distributor Digi-Key Corporation, the industry leader in electronic component selection, availability and delivery, today announced the signing of a global distribution agreement with M/A-COM Technology ...
Tags: electronic components, RF, microwave, millimeterwave
M/A-COM Technology Solutions Holdings Inc of Lowell, MA, USA, which makes semiconductor devices, modules and subassemblies for analog RF, microwave and millimeter-wave applications, has signed a global distribution agreement with Digi-Key ...
Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA, which makes enhancement-mode gallium nitride on silicon (eGaN) power field-effect transistors (FETs) for power management applications, has introduced the EPC9013 development ...
Tags: EPC E-mode GaN FETs
Momentive Performance Materials Quartz Inc (MPM) has increased and expanded its manufacturing capacity of tantalum carbide coatings (TaC) in response to the growing demand for silicon carbide (SiC) power devices and the increased need for ...
Agilent Technologies Inc of Santa Clara, CA, USA has been selected by Nitronex LLC of Morrisville, NC, USA, a GaAs labs company that designs and makes gallium nitride on silicon (GaN-on-Si)-based RF power devices, to provide a complete GaN ...
Tags: Electrical, Electronics
The hardness, crystalline structure and wide bandgap of gallium nitride (GaN) make it ideal for a variety of applications, including light-emitting diodes (LEDs), laser diodes that read blu-ray discs, transistors that operate at high ...
Tags: III-V Semiconductor, Laser