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III V Semiconductor
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Sanan IC Extends III-V Foundry From Greater China to North American, European and APAC Markets
Aug 27, 2018Sanan Integrated Circuit Co Ltd (Sanan IC) of Xiamen City, Fujian province (China’s first 6-inch pure-play compound semiconductor wafer foundry) has announced its entry into the North American, European and Asia Pacific (APAC) markets ...
Tags: integrated passive device, filters
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Solar-Tectic Granted US Patent for Low-Cost, High-Efficiency III-V Thin-Film Tandem Solar Cell on Glass Substrate
Oct 10, 2017Solar-Tectic LLC of Briarcliff Manor, NY, USA says that the US Patent and Trademark Office has granted it US patent 15/205,316 ‘Method of Growing III-V Semiconductor Films for Tandem Solar Cells’ for high-efficiency and ...
Tags: Thin-film PV, Glass Substrate
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Multi-Junction Si Solar Cell Efficiency Exceeds
Nov 12, 2016Silicon-based solar cells dominates today’s solar energy industry, while this technology has difficulty in bringing the conversion efficiency beyond 23% for commercialized solar cells in mass production. In order to break the ...
Tags: Solar Cell, solar energy
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Reducing Subthreshold Swing of Gallium Arsenide Transistors
Sep 28, 2016Korea Institute of Science and Technology (KIST) claims a record low subthreshold swing of 68mV/decade for a gallium arsenide (GaAs) field-effect transistor (FET) [SangHyeon Kim et al, IEEE Electron Device Letters, published online 24 ...
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III-V Lab Spin-off Almae Takes Over Marcoussis Facilities
Jul 12, 2016With the re-grouping of teams from III-V Lab (the joint Alcatel-Lucent, Thales and CEA-Leti industrial research laboratory), Almae Technologies SAS is taking over III-V Lab's facilities at Marcoussis, which is sited on the Plateau de Saclay ...
Tags: CEA-Leti, III-V Lab, laser components
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Veeco Wins First MBE R&D System Order From Chinese University
Jun 15, 2016Epitaxial deposition and process equipment maker Veeco Instruments Inc of Plainview, NY, USA has received the first order from a Chinese customer for its GENxplor R&D molecular beam epitaxy (MBE) system. Nanjing University is scheduled to ...
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Gallium Nitride Phosphide Absorber for Silicon-Based Solar Power
Oct 30, 2015Researchers in the USA have been working on gallium nitride phosphide (GaNP) as an absorbing material for solar power [S. Sukrittanon et al, Appl. Phys. Lett., vol107, p153901, 2015]. The aim of the team from University of California San ...
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The Group of III-V Semiconductors Has Developed a Highly Conductive TJ Grown
May 30, 2014The Group of III-V Semiconductors of the Solar Energy Institute at the Technical University of Madrid (Instituto de Energía Solar at Universidad Politécnica de Madrid, IES-UPM) has developed a highly conductive, high-bandgap ...
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Researchers in France Have Developed a Technique to Directly Grow Graphene
Mar 13, 2014Researchers in France have developed a technique to directly grow graphene on aluminium nitride (AlN) crystalline templates on silicon substrates [A. Michon et al, Appl. Phys. Lett., vol104, p071912, 2014]. Up to now, attempts to use ...
Tags: Electrical, Electronics
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Riber S.A. Received a Major Order for The Modernization
Feb 11, 2014Riber S.A.of Bezons,France,which manufactures molecular beam epitaxy(MBE)systems as well as evaporation sources and effusion cells,has received a major order for the modernization of the fleet of R&D and pilot production MBE systems used ...
Tags: Riber MBE III-V lab, Riber, Iii-V Lab
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GaN Make It Ideal for a Variety of Applications
Feb 7, 2014The hardness, crystalline structure and wide bandgap of gallium nitride (GaN) make it ideal for a variety of applications, including light-emitting diodes (LEDs), laser diodes that read blu-ray discs, transistors that operate at high ...
Tags: III-V Semiconductor, Laser
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Ammono S.A. Is Partnering with Kyma Technologies Inc of Raleigh
Jan 24, 2014Ammono S.A. of Warsaw, Poland, which produces bulk gallium nitride (GaN) using ammonothermal technology, has announced that it is partnering with Kyma Technologies Inc of Raleigh, NC, USA and MicroLink Devices of Niles, IL, USA in two novel ...
Tags: efficiency of power electronics, semiconductor materials
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POET Developed The Proprietary Planar-Optoelectronic Technology Platform
Jan 9, 2014POET Technologies Inc of Toronto, Canada – which, through subsidiary OPEL Defense Integrated Systems (ODIS Inc) of Storrs, CT, USA, has developed the proprietary planar-optoelectronic technology (POET) platform for monolithic ...
Tags: ODIS, POET Technologies, POET
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Engineers at Imec and IBM Have Independently Developed New Manufacturing Processes
Dec 23, 2013Engineers at Imec and IBM have independently developed new manufacturing processes for making the next decade's leading chips, they revealed late last year. These efforts will allow the marriage of silicon wafers and certain exotic ...
Tags: Electrical, Electronics
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Riber S.A. Manufactures Molecular Beam Epitaxy Systems
Dec 16, 2013Riber S.A. of Bezons, France, which manufactures molecular beam epitaxy (MBE) systems as well as evaporation sources and effusion cells, says that the IES electronics institute in Montpellier, France has purchased a Riber MBE412 III-V ...
Tags: Electrical, Electronics