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FET
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TI Expands GaN Power Portfolio with Smallest and Fastest GaN FET Drivers
Mar 7, 2018Expanding on its gallium nitride (GaN) power portfolio, Texas Instruments Inc (TI) has launched two high-speed GaN field-effect transistor (FET) drivers to create more efficient, higher-performing designs in speed-critical applications such ...
Tags: GaN Power, GaN FET Drivers
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Peregrine's New PE29102 FET Driver Brings Fastest Switching Speeds to GaN Class-D Audio
Oct 18, 2017Peregrine Semiconductor Corp of San Diego, CA, USA – a fabless provider of radio-frequency integrated circuits (RFICs) based on silicon-on-insulator (SOI) – has launched the UltraCMOS PE29102 high-speed FET driver. With a ...
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TI Launches High-Voltage, Three-Phase High-PWM-Frequency GaN Inverter Reference Design for 200V AC Servo Drives and Robotics
Jun 29, 2017Texas Instruments Inc (TI) has launched a three-phase, gallium nitride (GaN)-based inverter reference design that helps engineers build 200V, 2kW AC servo motor drives and next-generation industrial robotics with fast current-loop control, ...
Tags: GaN Inverter, AC Servo Drives
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EPC Launches GaN Half-Bridge Enabling 12V to 1.8V System Efficiency Over 85% at 5MHz at 14A Output
Jun 2, 2017Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA, which makes enhancement-mode gallium nitride on silicon (eGaN) power field-effect transistors (FETs) for power management applications, has announced the EPC2111, a 30V ...
Tags: transistors, GaN transistor
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PowerAmerica Funding Speeds Transphorm's Development of 900V GaN HEMT Product
Apr 25, 2017Due to funding assistance from PowerAmerica – a private-public partnership between the US Department of Energy, industry and academia – Transphorm Inc of Goleta, near Santa Barbara, CA, USA, which designs and manufactures what ...
Tags: PowerAmerica, GaN products
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Reducing Subthreshold Swing of Gallium Arsenide Transistors
Sep 28, 2016Korea Institute of Science and Technology (KIST) claims a record low subthreshold swing of 68mV/decade for a gallium arsenide (GaAs) field-effect transistor (FET) [SangHyeon Kim et al, IEEE Electron Device Letters, published online 24 ...
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Telcodium Partners with Transphorm on First Redundant Power Supplies Using GaN Fets
Sep 20, 2016Power supply design firm Telcodium of Boucherville, QC, Canada, in collaboration with Transphorm Inc of Goleta, near Santa Barbara, CA, USA — which designs and manufactures JEDEC-qualified 650V gallium nitride (GaN)-based devices for ...
Tags: Telcodium, Transphorm, GaN FETs
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Dialog Enters GaN Market with Integrated Devices Targeting Fast-Charging Power Adapters
Aug 30, 2016Dialog Semiconductor plc of London, UK, a fabless provider of highly integrated power management, AC/DC power conversion, solid-state lighting (SSL) and Bluetooth low-energy technology, has announced its first gallium nitride (GaN) power IC ...
Tags: GaN, Dialog Semiconductor plc, SSL
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Peregrine Unveils Fastest GaN FET Driver
Jul 16, 2016Peregrine Semiconductor Corp of San Diego, CA, USA – a fabless provider of radio-frequency integrated circuits (RFICs) based on silicon-on-insulator (SOI) – has launched what it claims is the fastest gallium nitride (GaN) ...
Tags: Peregrine, GaN FET Driver
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Freebird Partners with EPC to Develop Radiation-Hardened GaN Power Conversion Systems for Satellite and Harsh-Environment Applications
Apr 15, 2016Freebird Semiconductor Corp of North Andover, MA, USA, which manufactures high-reliability gallium nitride (GaN) high-electron-mobility transistor (HEMT) products for power semiconductor technologies in the commercial space-flight ...
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EPC Offers 15MHz Half-Bridge Development Boards Using eGaN FET Synchronous Bootstrap Augmented Gate Drive
Apr 5, 2016Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA, which makes enhancement-mode gallium nitride on silicon (eGaN) power field-effect transistors (FETs) for power management applications, has made available the EPC9066, EPC9067 ...
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Navitas Launches First GaN Power ICs
Mar 21, 2016Navitas Semiconductor Inc of El Segundo, CA, USA has launched its first products, which are claimed to be the industry's first gallium nitride (GaN) power ICs. Navitas was founded in 2013, and in 2014 investment firm MalibuIQ licensed the ...
Tags: GaN, Power electronics
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EPC Launches 100W, 92%-Efficient eGaN FET Development Board for 6.78MHz Airfuel Wireless Power Standard
Feb 18, 2016Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA, which makes enhancement-mode gallium nitride on silicon (eGaN) power field-effect transistors (FETs) for power management applications, has launched the EPC9065, a development ...
Tags: Wireless Power, EPC
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EPC Launches eGaN Power Transistor Enabling Higher Resolution in Augmented Reality and Autonomous Vehicle Applications
Feb 14, 2016Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA, which makes enhancement-mode gallium nitride on silicon (eGaN) power field-effect transistors (FETs) for power management applications, has launched the EPC2040 power transistor, ...
Tags: Transistor, power transistor
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EPC Posts Video Series on How to Design with GaN Power Devices for Power Conversion
Feb 12, 2016Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA, which makes enhancement-mode gallium nitride on silicon (eGaN) power field-effect transistors (FETs) for power management applications, has expanded its video library on GaN ...
Tags: EPC, E-mode GaN FETs, GaN-on-Si
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