Transistor articles & resources on Made-in-China.com

EpiGan Showcasing GaN Epiwafer Solutions for 5G

Aug 31, 2018

In booth J2554 of its local agent APEC at the SEMICON Taiwan show in Taipei (5-7 September) and in booth 354 at European Microwave Week (EuMW 2018) in Madrid, Spain (23-28 September), EpiGaN nv of Hasselt, near Antwerp, Belgium - which ...

Tags: GaN Epiwafer, epitaxial wafer

NASA Studies Space Applications for GaN Crystals

Aug 20, 2018

Two teams at the US National Aeronautics and Space Administration (NASA) Goddard Space Flight Center in Greenbelt, MD, USA are being funded to investigate the use of gallium nitride (GaN) to enhance space exploration. Engineer Jean-Marie ...

Tags: GaN transistors, GaN Crystal

Infineon Ships 5 Billionth Bulk-CMOS RF Switch

Jul 19, 2018

After beginning volume production of its first bulk-CMOS radio frequency (RF) switch in 2008, Infineon Technologies AG of Munich, Germany has now reached an annual run-rate far exceeding 1 billion and a cumulative shipments of 5 billion RF ...

Tags: RF Switch, Infineon

Seoul Semiconductor Introduces New Series of AC LED Modules

May 14, 2018

South Korean LED maker Seoul Semiconductor Co Ltd has introduced a series of AC LED modules. These modules, offered in designs from 200 to 10,000 lumens in round, rectangular and linear formats, integrate Seoul Semiconductor’s ...

Tags: Seoul Semiconductor, LED Module

TI Expands GaN Power Portfolio with Smallest and Fastest GaN FET Drivers

Mar 7, 2018

Expanding on its gallium nitride (GaN) power portfolio, Texas Instruments Inc (TI) has launched two high-speed GaN field-effect transistor (FET) drivers to create more efficient, higher-performing designs in speed-critical applications such ...

Tags: GaN Power, GaN FET Drivers

Panasonic Develops Insulated-Gate MIS GaN Power Transistor Capable of Continuous Stable Operation

Feb 24, 2018

Panasonic Corp of Osaka, Japan has developed an insulated-gate metal-insulator-semiconductor (MIS) gallium nitride (GaN) power transistor capable of continuous stable operation with no variation in its threshold gate voltage. This makes it ...

Tags: Panasonic, Power Transistor

ROHM Supplying Full-SiC Power Modules to Venturi Formula E Racing Team

Dec 5, 2017

ROHM of Kyoto, Japan is to provide full-SiC (silicon carbide) power modules to the VENTURI Formula E team during season 4 (2017–2018) of FIA Formula E (the world’s first formula racing championship for all-electric vehicles), ...

Tags: Power Modules, silicon carbide

GaN Systems Launches Evaluation Board Combining GaN Power Transistors with Peregrine's E-Hemt Drivers

Oct 20, 2017

GaN Systems Inc of Ottawa, Ontario, Canada – a fabless developer of gallium nitride (GaN)-based power switching semiconductors for power conversion and control applications – has made available the GS61004B-EVBDC evaluation ...

Tags: GaN Systems, integrated circuits

Peregrine's New PE29102 FET Driver Brings Fastest Switching Speeds to GaN Class-D Audio

Oct 18, 2017

Peregrine Semiconductor Corp of San Diego, CA, USA – a fabless provider of radio-frequency integrated circuits (RFICs) based on silicon-on-insulator (SOI) – has launched the UltraCMOS PE29102 high-speed FET driver. With a ...

Tags: Peregrine Semiconductor, Semiconductor

Macom's RF Energy Toolkit Now Available for Commercial OEMs Designing GaN-on-Si-Based RF Systems

Oct 11, 2017

M/A-COM Technology Solutions Inc of Lowell, MA, USA (which makes semiconductors, components and subassemblies for analog RF, microwave, millimeter-wave and photonic applications) says that its RF Energy Toolkits are now available for order, ...

Tags: RF Systems, Macom

Mitsubishi Electric Launching Ka-Band GaN-Hemt Mmic to Downsize Satellite Earth-Station Power Transmitters

Oct 10, 2017

Following development that was partially supported by Japan’s New Energy and Industrial Technology Development Organization (NEDO), Tokyo-based Mitsubishi Electric Corp is to launch the MGFG5H3001, a Ka-band (26–40GHz) 8W ...

Tags: Power Transmitters, Mitsubishi

GaN Systems and Taiwan's Ministry of Economic Affairs Collaborate on GaN Technology to Meet Global Power Challenges

Oct 10, 2017

GaN Systems Inc of Ottawa, Ontario, Canada – a fabless developer of gallium nitride (GaN)-based power switching semiconductors for power conversion and control – and Taiwan’s Ministry of Economic Affairs (MOEA) have ...

Tags: GaN Systems, Power Challenges

TSMC Profits From Surging Market Demand for Chips in Auto Application

Oct 9, 2017

Market insiders noted that TSMC (Taiwan Semiconductor Manufacturing Co.), the world's largest semiconductor foundry headquartered in Taiwan, will see a strong revenue performance as the firm won massive orders from multinational ...

Tags: TSMC, semiconductor

SiC Power Device Market to Grow at 40% CAGR From 2020 to More Than $1bn in 2022, After Tipping Point in 2019

Sep 27, 2017

“The SiC power business is concrete and real, with a promising outlook,” said Yole Développement in 2016. The trend has not changed in 2017, and the SiC industry is going even further as industrial players have increasing ...

Tags: SiC power, SiC devices

Mitsubishi Electric Develops SiC Mosfet with Record Power Efficiency for 1200V-Class Power Device

Sep 25, 2017

At the International Conference on Silicon Carbide and Related Materials (ICSCRM 2017) in Washington DC (17-22 September), Tokyo-based Mitsubishi Electric Corp unveiled a silicon carbide (SiC) metal-oxide-semiconductor field-effect ...

Tags: Power Device, Mitsubishi, SiC Mosfet

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