Taipei,Sept.10,2012(CENS)--Taiwan Semiconductor Manufacturing Co.(TSMC)is said to set capital expenditure at US$10 billion next year amid reports that Apple Inc.would contract the world's No.1 pure foundry to build its next-generation ...
Tags: Tsmc, Taiwan, Components
Singapore’s Nanyang Technological University has made a first demonstration of nitride semiconductor high electron mobility transistors (HEMT) grown on silicon substrates using ammonia molecular beam epitaxy (MBE) rather than the ...
Tags: Singapore, Technological University, electron mobility transistors
Cree, Inc. announces its latest silicon carbide (SiC) offering with low basal plane dislocation (LBPD) 100-mm 4H SiC epitaxial wafers. This LBPD material exhibits a total BPD density of < 1 cm-2 in the epitaxial drift layer, with BPDs ...
Tags: Wafer
Taipei,Sept.5,2012--J.K.Wang,Taiwan Semiconductor Manufacturing Co.'s vice president for operations/300mm fabs,yesterday said the company,currently the world's No.1 pure silicon foundry,will begin volume production of chips on 450mm silicon ...
Tags: Taiwan, semiconductor, manufacture, TSMC
New 12W and 25W LED driver ICs from iWatt work with triac and electronic dimmers and achieve power factor in excess of 0.95. IWatt has introduced two new dimmable solid-state lighting (SSL) driver ...
Tags: LED driver IC
4 September 2012 Osaka university orders Aixtron BM Pro system Deposition equipment maker Aixtron SE of Herzogenrath,Germany has announced that in Q3/2012 Japan's Osaka University ordered an Aixtron BM Pro system,capable of handling ...
Tags: Osaka university, BM Pro system, Aixtron SE
Cree continues to lead the SiC materials marketplace in driving to larger diameters and this latest advancement lowers device cost and enables adoption for customers with existing 150-mm diameter device processing lines. 150-mm epitaxial ...
Tags: Wafer
4 September 2012 Hitachi Cable demo first GaN vertical diode with 3000V breakdown and 1mΩcm2 on-resistance Picture:GaN substrates for power devices.Hitachi Cable Ltd says that it has succeeded in the trial manufacture of what is ...
Tags: Hitachi Cable, GaN, diode
Cree Inc of Durham,NC,USA has introduced low basal plane dislocation(LBPD)100-mm 4H silicon carbide(SiC)epitaxial wafers.This LBPD material exhibits a total BPD density of 1 cm-2 in the epitaxial drift layer,with BPDs capable of causing Vf ...
Warren East,CEO of chip designer ARM(pictured),has warned that sales growth will slow in the second half of 2012 due to increasing global economic uncertainty and,in particular,the rising expectation of recession and renewed financial ...
Tags: Warren East, chip designer, ARM, financial crisis, Europe
3 September 2012 EPC releases safe operating area data for its eGaN FETs Efficient Power Conversion Corp(EPC)of El Segundo,CA,USA,which makes enhancement-mode gallium nitride on silicon(eGaN)power field-effect transistors(FETs)used in ...
Dongguan Tianyu Semiconductor Technology Co Ltd,which claims to be the first manufacturer of silicon carbide(SiC)epitaxial wafers in China,has started to expand its SiC epiwafer business globally after the completion of three contracts in ...
Cree Inc of Durham, NC, USA has announced the availability of high-quality, low-micropipe 150mm 4H n-type silicon carbide (SiC) epitaxial wafers, with highly uniform epitaxial layers as thick as 100 microns available for immediate purchase ...
Tags: SiC wafer
iWatt has introduced a mains LED driver for loads up to 25W,claiming it to be flicker-less. "This new platform expands iWatta??s existing line of LED drivers,offering compatibility with an even wider range of installed dimmers,including ...
Tags: iWatt, improves Mains LED Driver, safety features, flicker-less
All American extends distribution agreement with GeneSiC Electronic component distributor All American Semiconductor has signed extended its distribution agreement with GeneSiC Semiconductor Inc of Dulles,VA,USA,which develops silicon ...
Tags: GeneSiC SiC, Distribution, Agreement