Researchers in China have developed indium gallium nitride (InGaN) photovoltaic devices that increase in efficiency with temperature up to 423K [Zhaoying Chen et al, Appl. Phys. Lett., vol109, p062104, 2016]. "The positive efficiency ...
Tags: InGaN solar cells InGaN, MOCVD, positive temperature coefficient
At the Solar Power International event in Las Vegas (12-15 September), copper indium gallium diselenide (CIGS) thin-film photovoltaic solar cell and panel maker MiaSolé of Santa Clara, CA, USA announced a new sales channel ...
Tags: MiaSolé, CIGS, Solar Power International, Inovateus Solar
At Solar Power International in Las Vegas (12-15 September), copper indium gallium diselenide (CIGS) thin-film photovoltaic solar cell and panel maker MiaSolé of Santa Clara, CA, USA (which was founded in 2004 and acquired by ...
Kaiam Corp of Newark, CA, USA - a private company founded in 2009 commercializing hybrid photonic integrated circuit (PIC) technology for pluggable optical transceivers in data-centers - has launched the new platform LightScale2. The ...
Tags: Kaiam, platform LightScale2, PIC technology
In Hall 11/D59 at the glasstec trade fair for glass production and processing (20–23 September), copper indium gallium diselenide (CIGS) thin-film photovoltaic module maker Avancis GmbH of Torgau, Germany is launching its new PowerMax ...
Tags: AVANCIS, CIS PV module, SKALA
Munich-based Solar Frontier Europe, a subsidiary of Tokyo-based Solar Frontier – the largest manufacturer of CIS (copper indium selenium) thin-film photovoltaic (PV) solar modules – says that its CIS modules have been selected ...
Tags: Solar Frontier, CIS, thin-film PV modules
Researchers in China have achieved continuous wave (cw) lasing at room temperature for indium gallium nitride (InGaN) laser diodes (LDs) grown directly on silicon (Si) [Yi Sun et al, Nature Photonics, 10, p595, 2016]. The team from Suzhou ...
Tags: InGaN Laser diodes, cw, SINANO
Researchers in Russia have developed an indium gallium arsenide (InGaAs) quantum well laser diode on (001) germanium-on-silicon 'virtual substrate' without offcut angle [V. Ya. Aleshkin et al, Appl. Phys. Lett., vol109, p061111, 2016]. ...
Tags: InGaAs, Laser diodes, III-Vs-on-Si
The global radio frequency (RF) IC market will increase at a compound annual growth rate (CAGR) of nearly 12% from 2016 to 2020, forecasts a report by Technavio. Asia-Pacific (APAC) is expected to be the main demand-generating region and ...
Researchers at Massachusetts Institute of Technology (MIT) in the USA have claimed record transconductance for III-V fin field-effect transistors (finFETs) when normalized according to fin width [Alon Vardi and Jesús A. del Alamo, ...
Tokyo-based Showa Shell Sekiyu, along with its subsidiary Solar Frontier – the largest manufacturer of CIS (copper indium selenium) thin-film photovoltaic (PV) solar modules – have signed a memorandum of understanding (MoU) with ...
Tags: Solar Frontier, CIS, thin-film PV modules
BluGlass Ltd of Silverwater, Australia – which was spun off from the III-nitride department of Macquarie University in 2005 to develop a low-temperature process using remote plasma chemical vapor deposition (RPCVD) to grow materials ...
University of Montpellier in France claims the first continuous-wave (cw) operation at room temperature of a 15μm indium arsenide (InAs) quantum cascade laser (QCL) [Alexei N. Baranov et al, Optics Express, vol. 24, p18799, 2016]. "To ...
Tags: University of Montpellier, InAs, MBE
University of California Santa Barbara (UCSB) in the USA has used limited-area epitaxy (LAE) on semi-polar gallium nitride (GaN) substrates to reduce misfit dislocation (MD) densities in multiple quantum well (MQW) green light-emitting ...
Yale University and University of Illinois Urbana in the USA have improved the efficiency of gallium arsenide phosphide (GaAsP) solar cells on silicon (Si) by reducing threading dislocation densities (TDDs) [Kevin Nay Yaung et al, Appl. ...
Tags: GaAsP solar cells, GaAsP, MBE, MOCVD