Monolithic microwave integrated circuit developer Custom MMIC of Westford, MA, USA has added to its BroadRange family of wideband gallium arsenide (GaAs) MMIC distributed amplifiers with the CMD233C4, for applications including military, ...
Northrop Grumman Corp of Redondo Beach, CA, USA has received a contract from the US Marine Corps (USMC) for an additional nine AN/TPS-80 Ground/Air Task-Oriented Radar (G/ATOR) low-rate initial production (LRIP) systems. This is the ...
Tags: Northrop Grumman.GaN-on-SiC, USMC
SAGE SatCom of San Diego, CA, USA (part of telecoms solutions provider REMEC Broadband Wireless), which manufactures power amplifiers for the satellite industry, has added an ultra-compact, efficient, low-power-consumption gallium nitride ...
Tags: SAGE SatCom, GaN, BUC
Researchers in Russia have developed an indium gallium arsenide (InGaAs) quantum well laser diode on (001) germanium-on-silicon 'virtual substrate' without offcut angle [V. Ya. Aleshkin et al, Appl. Phys. Lett., vol109, p061111, 2016]. ...
Tags: InGaAs, Laser diodes, III-Vs-on-Si
A team of researchers at the USA's Massachusetts Institute of Technology (MIT) and the Masdar Institute of Science and Technology in Abu Dhabi, United Arab Emirates has developed a new solar photovoltaic 'step cell' that combines two ...
Gallium arsenide (GaAs) IC foundry Advanced Wireless Semiconductor Company (AWSC) of Tainan Science-based Industrial Park, Taiwan has announced plans to repurchase five million shares (3.56% of its outstanding stock) at between NT$36 ...
For decades, researchers have tried to harness the unique properties of carbon nanotubes (CNTs) to create high-performance electronics that are faster or consume less power — resulting in longer battery life, faster wireless ...
The global radio frequency (RF) IC market will increase at a compound annual growth rate (CAGR) of nearly 12% from 2016 to 2020, forecasts a report by Technavio. Asia-Pacific (APAC) is expected to be the main demand-generating region and ...
Researchers at Massachusetts Institute of Technology (MIT) in the USA have claimed record transconductance for III-V fin field-effect transistors (finFETs) when normalized according to fin width [Alon Vardi and Jesús A. del Alamo, ...
Monolithic microwave integrated circuit developer Custom MMIC of Westford, MA, USA has added two new packaged driver amplifiers to its expanding product range. 2-9GHz driver amplifier with 15dB of gain The CMD232C3 gallium arsenide ...
Tags: Custom MMIC, GaAs, driver amplifier
Pasternack Inc of Irvine, CA, USA (which makes both passive and active RF, microwave and millimeter-wave products) has launched a line of high-rel frequency dividers that cover wide frequency bandwidths from 0.5 to 18GHz and are available ...
Yale University and University of Illinois Urbana in the USA have improved the efficiency of gallium arsenide phosphide (GaAsP) solar cells on silicon (Si) by reducing threading dislocation densities (TDDs) [Kevin Nay Yaung et al, Appl. ...
Tags: GaAsP solar cells, GaAsP, MBE, MOCVD
Researchers in Germany have been developing an epitaxial lift-off (ELO) process that would allow gallium arsenide (GaAs) substrates to be reused for indium gallium aluminium phosphide (InGaAlP) thin-film light-emitting diode (LED) ...
Skyworks Solutions Inc of Woburn, MA, USA (which manufactures analog and mixed-signal semiconductors) has launched two RF switches suitable for the Internet of Things (IoT) applications including the connected home. In addition to the ...
For second-quarter 2016, AXT Inc of Fremont, CA, USA – which makes gallium arsenide (GaAs), indium phosphide (InP) and germanium (Ge) substrates and raw materials – has reported revenue of $20.5m, down slightly on $21m a year ...
Tags: raw materials