Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA - which makes enhancement-mode gallium nitride on silicon (eGaN) power field-effect transistors (FETs) for power management applications – has announced its Phase Eight ...
Tags: GaN Device, integrated circuits
Peregrine Semiconductor Corp of San Diego, CA, USA – a fabless provider of radio-frequency integrated circuits (RFICs) based on silicon-on-insulator (SOI) – has launched what it claims is the fastest gallium nitride (GaN) ...
Tags: Peregrine, GaN FET Driver
With the re-grouping of teams from III-V Lab (the joint Alcatel-Lucent, Thales and CEA-Leti industrial research laboratory), Almae Technologies SAS is taking over III-V Lab's facilities at Marcoussis, which is sited on the Plateau de Saclay ...
Tags: CEA-Leti, III-V Lab, laser components
Ghent University/IMEC in Belgium and X-Celeprint in Ireland/USA claim "the first III-V optoelectronic components transfer printed on and coupled to a silicon photonic integrated circuit" [Andreas De Groote et al, Optics Express, vol24, ...
POET Technologies Inc of San Jose, CA, USA — which has developed the proprietary planar optoelectronic technology (POET) platform for monolithic fabrication of integrated III-V-based electronic and optical devices on a single ...
Tags: POET, BB Photonics, integrated photonic
Micro-assembly equipment maker Finetech of Berlin, Germany says that a Lambda bonding system has been installed in the Lurie Nanofabrication Facility (LNF) at the University of Michigan in Ann Arbor. The sub-micron accuracy bonder is ...
Tags: LED, packaging equipment
At the IEEE Honors Ceremony in New York City on 18 June, Dr David F. Welch - co-founder & president of Infinera Corp of Sunnyvale, CA, USA, a vertically integrated manufacturer of digital optical transport networking systems incorporating ...
Tags: Infinera, PICs, digital optical transport networking systems
MACOM Technology Solutions Holdings Inc of Lowell, MA, USA (which makes semiconductors, components and subassemblies for analog RF, microwave, millimeter-wave and photonic applications) has launched two packaged linear power amplifiers ...
Tags: MACOM, power amplifiers
At the International Symposium on 3D Power Electronics, Integration and Manufacturing Symposium in Raleigh, NC, USA (13-15 June), power management component supplier Sarda Technologies of Durham, NC, USA announced a collaboration to ...
Researchers in Hong Kong and USA have developed indium arsenide (InAs) quantum dot (QD) microdisk lasers directly integrated on silicon (Si) with performance comparable to the best reported for similar devices on gallium arsenide (GaAs) ...
Tags: InAs quantum dot microdisk lasers InAs GaAs substrates
Turn-key back-end production services firm Presto Engineering Inc of San Jose, CA, USA (which provides semiconductor product engineering & test and supply chain management to integrated device manufacturer, fabless and electronics ...
Tags: Presto RF testing
Rearchers in China claim the first radio frequency (RF) switch device based on indium gallium arsenide (InGaAs)-channel metal-oxide-semiconductor field-effect transistor (MOSFET) technology [Zhou Jiahui et al, J. Semicond. 2016, vol37, ...
Tags: InGaAs MOSFET RF switch
Peregrine Semiconductor Corp of San Diego, CA, USA – a fabless provider of radio-frequency integrated circuits (RFICs) based on silicon-on-insulator (SOI) – has launched the UltraCMOS PE42723, an RF switch with what is claimed ...
Tags: Peregrine, SOI, RF switches
NeoPhotonics Corp of San Jose, CA, USA (a vertically integrated designer and manufacturer of hybrid photonic integrated optoelectronic modules and subsystems for high-speed communications networks) has announced initial sample availability ...
Tags: NeoPhotonics, PICs
Oclaro Inc of San Jose, CA, USA (which provides components, modules and subsystems for optical communications) has announced its line-up of fiber-optic transceivers designed to drive the data-center transition from 40Gb/s to 100Gb/s and ...
Tags: Oclaro, Transition, OFC