Researchers in Taiwan have used nanopyramid nitride semiconductor structures to explore long-wavelength green, olivine and amber light-emitting diode (LED) structures [Shih-Pang Chang, Optics Express, Vol. 21, p23030, 2013]. The team was ...
Tags: Nitride LEDs, Electronics
Taiwan’s National Cheng Kung University has developed near-green light-emitting diodes (LEDs) using a new indium gallium nitride (InGaN) growth process that gives devices with a higher peak external quantum efficiency of 48.6% ...
Tags: LEDs, Near-green LEDs, InGaN MOCVD
Germany's Azzurro Semiconductors AG has reported uniformity measurements for indium gallium nitride (InGaN) light-emitting diodes on large-diameter silicon substrates up to 200mm [Andrea Pinos, etal, Appl. Phys. Express, vol6, p095502, ...
Tags: InGaN Silicon substrates, LED, Electrical, Electronics
Researchers in France have developed a monolithic metal-organic vapor phase epitaxy (MOVPE) process for growing indium gallium nitride (InGaN) light-emitting diodes (LEDs) with a multiple quantum well (MQW) light converter [Benjamin ...
Tags: Electrical, Electronics
Researchers based in the USA have used a double-heterostructuring based on order-disorder properties of aluminium indium phosphide (AlInP) to produce 'amber-green' light-emitting diodes (LEDs) [Theresa M. Christian et al, J. Appl. Phys., ...
Tags: LEDs, Electrical, Electronics
Researchers in China have been developing nanopatterned-sapphire substrates (NPSS), achieved with nano-sphere lithography (NSL), as a basis for the production of superior aluminium gallium nitride (AlGaN) semiconductor material for deep ...
Tags: DUV LEDs, LED, Electrical, Electronics
Peking University has found that using a pre-strain layer in nitride semiconductor epitaxial structures designed for blue laser diodes (LDs) can reduce the efficiency-sapping quantum-confined Stark effect (QCSE) [Cao Wen-Yu et al, Chin. ...
The US Naval Research Laboratory (NRL) in Washington DC has developed a method to grow epitaxial nitride semiconductors on graphene [Neeraj Nepal et al, Appl. Phys. Express, vol6, p061003, 2013]. The researchers hope that this could lead to ...
Tags: Graphene, Electrical, Electronics, hot-electron transistors
Northwestern University's Center for Quantum Devices has developed a suface-plasmon (SP) enhancement technique for ultraviolet (UV) light-emitting diodes (LEDs) produced on silicon substrates [Chu-Young Cho et al, Appl. Phys. Lett., vol102, ...
Tags: UV-LEDs, Electrical, Electronics
Researchers in China have used strain engineering to improve the light output power of 530nm green light-emitting diodes (LEDs) by 28.9% at 150mA current injection [Hongjian Li et al, Appl. Phys. Express, vol6, p052102, 2013]. The research ...
Together with researchers at the US Army Aviation & Missile Research, Development & Engineering Center (AMRDEC) and Duke University, a team led by North Carolina State University (NCSU) claims to have solved a long-standing materials ...
Tags: NCSU, ZnO-Based UV Lasers, Electronics
AIXTRON SE today announced that the University of Cambridge has successfully commissioned another multi-wafer Close Coupled Showerhead (CCS) MOCVD reactor at its new facility at the Department of Material Science and Metallurgy. The CCS ...
Tags: MOCVD Reactor, Gan-on-Si Wafers
Long-term collaboration for growth of 6-inch GaN-on-Si wafers planned AIXTRON SE today announced that the University of Cambridge has successfully commissioned another multi-wafer Close Coupled Showerhead (CCS) MOCVD reactor at its new ...
Tags: LED applications, LED
In order to meet the growing demand for sustainable lighting, Technology Foundation STW and Philips have taken the initiative to form the ‘Advanced Sustainable Lighting Solutions’ . With eight recently approved research ...
Tags: LED Lighting, Lighting, LED
Researchers in Spain have grown high-indium-content indium gallium nitride (InGaN) directly on silicon (Si) substrates [Praveen Kumar et al, Appl. Phys. Express, vol6, p035501, 2013]. The work was carried out at Universidad ...
Tags: InGaN, silicon, Optoelectronics, Microtechnology