Epiwafer foundry and substrate maker IQE plc of Cardiff, Wales, UK is to play a key part in a US public-private consortium of more than 25 companies, universities and state and federal organizations selected to lead the Next Generation ...
Tags: IQE, Power electronics, GaN-on-Si, CMOS
Oxford Instruments is offering an upgrade option for its ALD equipment to apply a bias voltage to the substrate, adding further control of the energy at the wafer surface in order to tune the properties of the deposited film. While scaling ...
Laser dicing systems maker Advanced Laser Separation International NV (ALSI) of Beuningen, The Netherlands has received an order for a laser dicing system from Plessey Semiconductors Ltd for its LED manufacturing facility in Plymouth, UK. ...
A molecule nobody thought to explore may unlock a potential therapeutic target for a debilitating connective tissue disorder, according to Western-led research. Western professor Dr. David O'Gorman and PhD student Christina Raykha have ...
Tags: therapeutic target, connective tissue disorder, Dupuytren's disease
Researchers at Korea's Chonbuk National University and Korea Institute of Science and Technology have improved the contact of graphene with p-type gallium nitride (p-GaN), resulting in improved near-ultraviolet (NUV) light-emitting diodes ...
Tags: Near-ultraviolet LEDs, Graphene GaN MOCVD, Gallium Nitride
Agilent Technologies Inc of Santa Clara, CA, USA has announced the latest release of its GoldenGate RFIC simulation, verification and analysis software. GoldenGate 2013.10 provides RFIC designers with easy-to-use EVM-, BER- and ACPR-type ...
Researchers in China have developed a selective area epitaxy (SAE) approach to create nanopyramids of nitride semiconductor 'white' light-emitting diodes (LEDs) without using phosphors [Kui Wu et al, Appl. Phys. Lett., vol103, p241107, ...
Tags: Electrical, Electronics, LED
A government and industry team led by engineers from the US Air Force Research Laboratory’s Materials and Manufacturing Directorate (AFRL/RX) has completed a program to assess, improve, refine and validate a domestic source of supply ...
Tags: Electrical, Electronics
Researchers based in Korea and Egypt have used wafer thinning to increase the efficiency of nitride semiconductor green light-emitting diodes (LEDs) [Wael Z. Tawfik et al, Appl. Phys. Express, vol6, p122103, 2013]. The contributing ...
Researchers at University of California Santa Barbara (UCSB) have used low-temperature metal-organic chemical vapor deposition (MOCVD) of p-type gallium nitride (GaN) to achieve intentional surface roughening of a solar cell device, thereby ...
Tags: Ingan Solar Cell, MOCVD
Good government policies can help propel an industry forward but bad ones can hinder development. Although China’s policies are aimed at developing the LED industry, the subsidies have gotten out of control recently, said LEDinside ...
Tags: LED Policies, LED Lighting
Nitronex LLC of Morrisville, NC, USA, which designs and makes gallium nitride on silicon (GaN-on-Si)-based RF power transistors for the defense, communications, broadband, and industrial markets, has launched the NPA1006, a 28V, 20MHz-1GHz, ...
Tags: Electrical, Electronics
The LED lighting market in China is expected to double in size from 9.6 percent to 18 percent of all lighting used in the next four years, according to a recent growth forecast from Lux Research. This growth will be spurred by falling ...
Tags: LED Lighting, LED Market
San'an Opto announced the company will be purchasing advanced 20 single chamber or five four-chambered GaN MOCVD systems from international companies for its Xiamen subsidiary on Dec. 16, 2013. Xiamen San'an Opto has received RMB 24 ...
silicon to play major role in LED production 13 Dec 2013 IHS predicts rapid transition to GaN-on-silicon LED manufacture for backlighting and some general lighting applications. Silicon switch In a dramatic change from the status ...
Tags: IHS, LED Production, LED