Ingan Solar Cell

UCSB Have Used Low-Temperature Metal-Organic Chemical Vapor Deposition
Jan 2, 2014
Researchers at University of California Santa Barbara (UCSB) have used low-temperature metal-organic chemical vapor deposition (MOCVD) of p-type gallium nitride (GaN) to achieve intentional surface roughening of a solar cell device, thereby ...

Tags: Ingan Solar Cell, MOCVD
UCSB Have Been Developing Indium Gallium Nitride Solar Cell Structures
Nov 26, 2013
University of California Santa Barbara (UCSB) and Fuji Electric Corp of America have been developing indium gallium nitride (InGaN) solar cell structures in efforts to extend the conversion efficiency of multi-junction photovoltaic (PV) ...

Tags: Nitride Barriers, Electrical