Taiwan National Tsing Hua University has established a new compound semiconductor laboratory for the development of new chip components that will support alternative green energy sources. Cheng Keh-yung, dean of NTHU's College of Electrical ...
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By nestling quantum dots in an insulating egg-crate structure, researchers at the Harvard School of Engineering and Applied Sciences (SEAS) have demonstrated a robust new architecture for quantum-dot light-emitting devices (QD-LEDs). ...
Tags: Market View, led
By nestling quantum dots in an insulating egg-crate structure, researchers at the Harvard School of Engineering and Applied Sciences (SEAS) have demonstrated a robust new architecture for quantum-dot light-emitting devices (QD-LEDs). ...
Tags: led
Deposition equipment maker Aixtron SE of Herzogenrath, Germany says that its customer Infineon Technologies AG has reached the first stage in its plans to evaluate gallium nitride on silicon (GaN-on-Si) power HEMTs (high-electron-mobility ...
Tags: mocvd
Deposition equipment maker Aixtron SE of Herzogenrath, Germany says that its customer Infineon Technologies AG has reached the first stage in its plans to evaluate gallium nitride on silicon (GaN-on-Si) power HEMTs (high-electron-mobility ...
Tags: Market View, mocvd
The pioneer of gallium nitride-on-silicon technology has chosen the location in Taipei, Taiwan so that the Chinese, Japanese and Korean markets can be reached within two hours flight time. Germany based Azzurro Semiconductor, is ...
Tags: Market View, led chip
The pioneer of gallium nitride-on-silicon technology has chosen the location in Taipei, Taiwan so that the Chinese, Japanese and Korean markets can be reached within two hours flight time. Germany based Azzurro Semiconductor, is ...
Tags: led chip
5 June 2012 SiC drives material innovation for high-power electronics Due to its superior thermal and electrical properties, the wide-bandgap material silicon carbide (SiC) has emerged as a key enabling material that has the potential to ...
Tags: SiC material, MOSFET, performance criteria, Defense agencies