The global ultraviolet (UV) market value in 2014 is estimated to reach US$815 million, of which the UV LED market will have about a 15% market share equivalent to US$122 million in market value, according to LEDinside. "UV LED single unit ...
Tags: UV LED market, Lights
Ohio State University and University of Illinois at Chicago have developed deep ultraviolet (DUV) light-emitting diodes (LEDs) based on III-nitride semiconductor nanowires [Thomas F Kent et al, Nanotechnology, vol25, p455201, 2014]. The ...
NTT Basic Research Laboratories in Japan has used a hexagonal boron nitride (h-BN) layer to release and transfer gallium nitride (GaN) high-electron-mobility transistors (HEMTs) from sapphire substrate to thermally conducting copper, ...
Tags: Boron Nitride, GaN Transistors
Profitability for LED products is shrinking due to continual price drops along with increasing competition, and more than 100 relatively small China-based LED packaging service providers will be forced out of the market in 2014 and the ...
Tags: LED Packaging, LED products
Optical inspection is a method of inspection on defects in targets under test by comparing images of targets under test obtained through optical imaging (after processed and analyzed with specific processing algorithm) with images of ...
Tags: Optical inspection, PCB, TFT-LCD
EV Group (EVG) of St Florian, Austria (a supplier of wafer bonding and lithography equipment for MEMS, nanotechnology and semiconductor applications) has established the NILPhotonics Competence Center, which is designed to assist customers ...
In booth 4168, Hall 4, at SEMICON Japan 2014 in Tokyo (3-5 December), Nanometrics Inc of Milpitas, CA, USA (a supplier of process control metrology and inspection systems) is launching its latest photoluminescence (PL) system, Imperia, for ...
Tags: Imperia Pl System, Manufacturing, Electrical
RF power transistors supplier Freescale Semiconductor of Austin, TX, USA has introduced what are claimed to be the industry’s highest thermal and wideband performance GaN device with a 125W continuous wave (CW) gallium nitride on ...
Tags: Power Transistor, Electrical
Bernin-based Soitec (which makes engineered substrates and CPV systems) and Grenoble-based micro/nanotechnology R&D center CEA-Leti of France, together with the Fraunhofer Institute for Solar Energy Systems ISE of Freiburg, Germany, have ...
Tags: Solar Cell, Electrical
UK-based Plessey says that EDN (Electronic Design News) has named its smallest packaged gallium nitride on silicon MaGIC (Manufactured on GaN-on-Si I/C) high-brightness LEDs, the dotLED, as one of the Hot 100 Products of 2014. Chosen by ...
Tags: white LED, Electrical
Raytheon UK’s semiconductor business unit in Glenrothes, Scotland, UK has been selected by a “leading automotive manufacturer” to develop a silicon carbide (SiC)-based metal-oxide-semiconductor field-effect transistor ...
Led by Yang Yang, the Carol and Lawrence E. Tannas Jr Professor of Engineering at the Henry Samueli School of Engineering and Applied Science, researchers at University of California, Los Angeles (UCLA) have developed a photodetector that ...
RF Micro Devices Inc of Greensboro, NC, USA and fellow RF front-end component maker TriQuint Semiconductor Inc of Hillsboro, OR, USA say that they have received all necessary shareholder and regulatory approvals to move forward with their ...
Tags: RF Micro Devices, Electrical
LED Lighting Industry Data Statistical Description: The LED bulb, lighting, lamps only constituted by a single semiconductor component are classified into HS :85414010. The LED bulb, lighting, lamps only constituted by two or more ...
Silicon carbide (SiC) power semiconductor supplier GeneSiC Semiconductor Inc of Dulles, VA, USA has announced availability of a gate driver evaluation board and has expanded its design support for its SiC junction transistor (SJT, claimed ...
Tags: SiC Junction Transistors, Driver Evaluation Board, Electrical