Spending on microwave RF power semiconductors has been kick-started by the availability of new gallium nitride (GaN) devices for 4-18GHz, says market intelligence firm ABI Research in its new report 'Microwave RF Power Semiconductors' (part ...
Tags: Semiconductor, Electrical, Electronics
Researchers in France have developed a monolithic metal-organic vapor phase epitaxy (MOVPE) process for growing indium gallium nitride (InGaN) light-emitting diodes (LEDs) with a multiple quantum well (MQW) light converter [Benjamin ...
Tags: Electrical, Electronics
Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA has introduced the EPC2018 as the newest member of its family of enhancement-mode gallium nitride on silicon (eGaN) power field-effect transistors (FETs). The EPC2018 is a ...
Tags: EPC E-mode GaN FETs, Electrical, Electronics
RF Micro Devices Inc of Greensboro, NC, USA has introduced what it claims are the world's first 6-inch gallium nitride on silicon carbide (GaN-on-SiC) wafers for manufacturing RF power transistors for both military and commercial use. The ...
M/A-COM Technology Solutions Inc of Lowell, MA, USA (which manufactures semiconductors, components, and subassemblies for RF, microwave and millimeter-wave applications) has launched a ceramic gallium nitride on silicon carbide (GaN-on-SiC) ...
Tags: GaN-on-Sic, Electronics
Kyma Technologies Inc of Raleigh, NC, USA, which provides crystalline gallium nitride (GaN), aluminum nitride (AlN) and aluminum gallium nitride (AlGaN) materials and related products and services, has provided an update on its aluminum ...
Tags: Kyma Technologies, Electronics
At the 2013 Electric & Hybrid Vehicle Conference & Expo in Novi, MI, USA (17-19 September), GaN Systems Inc of Ottawa, Ontario, Canada, a fabless provider of gallium nitride (GaN)-based power switching semiconductors for power conversion ...
Tags: GaN Systems, Hybrid Vehicles
Aethercomm Inc of San Marcos, CA, USA, which designs and makes high power RF amplifiers, subsystems and systems for use in radar, electronic warfare, communication systems, and test & measurement, is launching the SSPA 6.000-18.000-50 ...
Tags: power amplifiers, Electrical, Electronics
Jimei University in China has used indium gallium nitride (InGaN) p-type contacts to increase light output power by 45% over a reference device [Wang Min-Shuai and Huang Xiao-Jing, Chin. Phys. B, vol. 22, p086803, 2013]. The researchers ...
Tags: InGaN LEDs MOCVD, LED, Electrical, Electronics
Microsemi Corp of Aliso Viejo, CA, USA (which designs and makes analog and RF devices, mixed-signal integrated circuits and subsystems) has expanded its family of radio-frequency power transistors based on gallium nitride (GaN) ...
Tags: Microsemi, Electrical, Electronics
To increase the efficiency of voltage converters and minimize heat losses, researchers at the Fraunhofer Institute for Applied Solid State Physics IAF in Germany are developing transistors based on gallium nitride, characterized by low ...
Tags: IAF FBH, Electrical, Electronics
Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA has introduced the EPC2016 as the newest member of its family of enhancement-mode gallium nitride on silicon (eGaN) power field-effect transistors (FETs). The EPC2016 is a ...
Tags: Electrical, Electronics
Leading Chinese insulin producer Gan & Lee Pharmaceuticals is brought under the limelight due to a bribery scandal. People in the know disclosed in an interview on September 9 that it was established in Beijing in 1998 and as the sole ...
On September 3, 2013, in the patent infringement lawsuits in Germany at the Düsseldorf District Court which Nichia Corporation (“Nichia”) filed against Everlight Electronics Co., Ltd. (Taiwan) and Everlight Electronics ...
Tags: LED Products, YAG Patent
A collaborative team led by Arkansas Power Electronics International Inc (APEI) and including Toyota Motor Engineering and Manufacturing North America Inc, GaN Systems Inc, the University of Arkansas' National Center for Reliable Electric ...