RFMD GaN power transistor

RF Micro Devices Introduced What It Claims Are The World's First 6-Inch GaN-on-SiC Wafers
Sep 19, 2013
RF Micro Devices Inc of Greensboro, NC, USA has introduced what it claims are the world's first 6-inch gallium nitride on silicon carbide (GaN-on-SiC) wafers for manufacturing RF power transistors for both military and commercial use. The ...

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