21 June 2012 Sumitomo launches next-gen GaN HEMT for L and S-band satellite applications In booth 2003 at the 2012 IEEE MTT-S International Microwave Symposium(IMS)in Montreal,Canada(17-22 June),wireless and optical communications ...
Tags: Sumitomo Electric, GaN HEMT, Satellite Applications, IMS 2012
At the 2012 IEEE MTT-S International Microwave Symposium(IMS)in Montreal,Canada(17-22 June),RF front-end component maker and foundry services provider TriQuint Semiconductor Inc of Hillsboro,OR,USA has announced initial sample availability ...
At the 2012 IEEE MTT-S International Microwave Symposium(IMS)in Montreal,Canada(17-22 June),Germany's Infineon Technologies AG has launched the BFx840xESD series of SiGe:C(silicon-germanium:carbon)heterojunction bipolar ...
Tags: Infineon, transistors, WiFi
Recognized as a compelling alternative to silicon for many RF applications,gallium nitride(GaN)technology has generated significant industry interest due to its performance advantages,but has faced significant challenges related to ...
Tags: NXP, RF applications, mainstream GaN
In booth 1210 at the 2012 IEEE MTT-S International Microwave Symposium (IMS) in Montreal, Canada (17-22 June), RF Micro Devices Inc of Greensboro, NC, USA has launched the RFVA0016 — a highly integrated broadband quarter-watt (1/4W) ...
Tags: RFMD, International, applications
In booth 1507 at the 2012 IEEE MTT-S International Microwave Symposium (IMS) in Montreal, Canada (19–21 June), Skyworks Solutions Inc of Woburn, MA, USA (which manufactures high-reliability analog and mixed-signal semiconductors) has ...
Tags: Skyworks, Canada, manufactures
20 June 2012 Toshiba adds gain-and efficiency-optimized C-band GaAs FET PAs for microwave radio and BUCs In booth 710 at the 2012 IEEE MTT-S International Microwave Symposium(IMS)in Montreal,Canada(19-21 June),Toshiba America Electronic ...
Tags: Toshiba, GaAs FET PAs, IMS 2012, microwave radio, BUCs
20 June 2012 Toshiba launches high-gain,high-power X-band GaN hybrid IC supporting AESA&PESA radar In booth 2710 at the 2012 IEEE MTT-S International Microwave Symposium(IMS)in Montreal,Canada(19-21 June),Toshiba America Electronic ...
Tags: Toshiba, GaN HEMT, AESA&PESA radar, IMS 2012
20 June 2012 NXP's 0.65mm x 0.44mm x 0.2mm SiGe:C GPS LNAs offer 0.60dB noise figure NXP Semiconductors N.V.of Eindhoven,The Netherlands,which provides mixed-signal and standard product solutions,has unveiled the BGU8006 low-noise ...
Tags: NXP Semiconductors, WLCSP, GPS LNAs, BGU8006 LNA
Toshiba America Electronic Components Inc(TAEC)-a subsidiary of Tokyo-based semiconductor maker Toshiba Corp-has announced a Ka-band high-power gallium nitride(GaN)microwave monolithic integrated circuit(MMIC)with what it claims is one of ...
At the 2012 IEEE MTT-S International Microwave Symposium(IMS)in Montreal,Canada(17–22 June),Freescale Semiconductor of Austin,TX,USA,which provides RF power technology for cellular markets,has launched new Airfast transistors ...
At the 2012 IEEE MTT-S International Microwave Symposium(IMS)in Montreal,Canada(17-22 June),RF front-end component maker and foundry services provider TriQuint Semiconductor Inc of Hillsboro,OR,USA has launched two gallium arsenide power ...
Cree Inc of Durham,NC,USA has launched a 40V,0.25µm,GaN-on-SiC HEMT process die product family,with power and bandwidth capabilities through the Ku-band that enables the replacement of travel-wave tubes with solid-state ...
Tags: Cree, GaN-on-SiC, HEMT, Amplifier
Cree Inc of Durham,NC,USA has announced the qualification and production release of two new gallium nitride(GaN)processes:G40V4(a 0.25µm process with operating drain voltage up to 40V)and G50V3(a 0.4µm process with operating ...
Monolithic microwave integrated circuit developer Custom MMIC of Westford,MA,USA is offering two new devices from its growing MMIC design library.The CMD157(die)and CMD157P3(packaged)are gallium arsenide(GaAs)MMIC low-noise ...
Tags: Custom MMIC, GaAs, LNA, Microwave