Due to funding assistance from PowerAmerica – a private-public partnership between the US Department of Energy, industry and academia – Transphorm Inc of Goleta, near Santa Barbara, CA, USA, which designs and manufactures what ...
Tags: PowerAmerica, GaN products
Independent III-V optoelectronic foundry Compound Semiconductor Technologies Global Ltd (CST Global) of Hamilton (near Glasgow), Scotland, UK is taking the commercial lead on the 14-month research project ‘Quantum Cooling using Mode ...
GaN Systems Inc of Ottawa, Ontario, Canada – a fabless developer of gallium nitride (GaN)-based power switching semiconductors for power conversion and control applications – says that its funding partners have been recognized ...
Tags: GaN Systems Power, semiconductors
Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA, which makes enhancement-mode gallium nitride on silicon (eGaN) power field-effect transistors (FETs) for power management applications, has announced its Phase Nine Reliability ...
Tags: gallium nitride, FETs
Advantech Wireless Inc of Montreal, Canada (which manufactures satellite, RF equipment and microwave broadband communications systems) has received follow-on orders from military customers for its X-Band line of gallium nitride (GaN)-based ...
Tags: Advantech Wireless, RF equipment
As 2016 comes to an end, there were many exciting and surprising technology breakthroughs, based on statistics complied by LEDinside there were at least 10 major technology advancements this year. American researchers make droop free LEDs ...
Jiangxi Luye Auto Lighting launched the first automotive lighting LED module plant in Nanchang Optical Valley in China, reported Xinhua. The LED automotive module manufacturing facility values RMB 500 million (US $72.97 million) in total, ...
Tags: Auto Lighting, LED Lighting
Qorvo Inc of Greensboro, NC and Hillsboro, OR, USA (which provides core technologies and RF solutions for mobile, infrastructure and defense applications) has launched two new power amplifiers (PAs) including what is claimed to be the first ...
Tags: Qorvo, PAs, GaN technology
The US Missile Defense Agency has awarded Raytheon Company of Waltham, MA, USA a contract modification to develop a transition to production process to incorporate gallium nitride (GaN) components into existing and future AN/TPY-2 radars. ...
Electronic hardware and software design and manufacturing solutions provider Mentor Graphics Corp of Wilsonville, OR, USA has joined the Wide Band Gap integration (WBGi) power electronics consortium to participate in thermal management and ...
Tags: Mentor Graphics, WBGi
SENTECH Instruments GmbH of Berlin, Germany says that the Institute for Microelectronics and Microsystems (CNR-IMM) in Catania – which is part of the Physics and Matter Technologies Department (DSFTM) of the National Research Council ...
Tags: SENTECH Instruments GmbH, CNR-IMM
UK-based LED maker Plessey has announced the first standard LED module based on its Stellar beam-forming technology. The new standard module is said to open up opportunities for creativity in industrial and architectural lighting design. ...
Tags: Plessey, first standard LED module, Stellar beam-forming technology
UK-based process equipment maker Oxford Instruments has announced the development and launch of a silicon carbide (SiC) via plasma etch process using its PlasmaPro100 Polaris etch system. SiC is becoming an increasingly important ...
Tags: Oxford Instruments, SiC, GaN RF devices
A master supply agreement has established e2v inc of Milpitas, CA, USA (which provides solutions, sub-systems and components to the medical & science, aerospace & defense and commercial & industrial markets) as the global supplier of 100V ...
Tokyo-based Mitsubishi Electric Corp is expanding its lineup of gallium nitride high-electron-mobility transistors (GaN HEMTs) to include models operating at frequencies of 13.75–14.5GHz with saturated output power of 100W (50.0dBm) ...
Tags: Mitsubishi Electric, GaN HEMTs