Lund University has developed multi-gate (MuG) III-V metal-oxide-semiconductor field-effect transistors (MOSFETs) with a cut-off frequency of 210GHz and a maximum oscillation frequency of 250GHz, “the highest of any reported ...
Tags: effect transistors, fins, plasma, Electrical&Electronics
At 29th annual IEEE Applied Power Electronics Conference & Exposition (APEC 2014) in Fort Worth, TX, USA (16-20 March), Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA, which makes enhancement-mode gallium nitride on silicon ...
University of Illinois at Urbana-Champaign has realized junctionless (JL) gallium arsenide (GaAs) nanowire field-effect transistors (NWFETs) "for the first time" by implantation-free source/drain metal-organic chemical vapour deposition ...
Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA, which makes enhancement-mode gallium nitride on silicon (eGaN) power field-effect transistors (FETs) for power management applications, has introduced the EPC9013 development ...
Tags: EPC E-mode GaN FETs
Engineers at Imec and IBM have independently developed new manufacturing processes for making the next decade's leading chips, they revealed late last year. These efforts will allow the marriage of silicon wafers and certain exotic ...
Tags: Electrical, Electronics
At the IEEE International Electron Devices Meeting (IEDM 2013) in Washington DC (9-11 December), epiwafer foundry and substrate maker IQE plc of Cardiff, Wales, UK, Pennsylavania State University and the US Commerce Department's National ...
Tags: Low-Power Tunneling Transistor, Electrical, Electronics
University of California Santa Barbara (UCSB) researchers have been studying the effect of using undoped vertical spacers in the source and drain contacts to reduce off-state leakage in indium arsenide (InAs)-channel ...
Tags: Electrical, Electronics, Mosfets
At the IEEE International Electron Devices Meeting (IEDM 2013) in Washington DC (9-11 December), epiwafer foundry and substrate maker IQE plc of Cardiff, Wales, UK, Pennsylavania State University and the US Commerce Department's National ...
Tags: IQE, Electrical, Electronics
RWTH Aachen University has reported the first small-signal response frequency characteristics for p-channel gallium nitride (GaN) heterostructure field-effect transistors (HFETs) [Herwig Hahn et al, Jpn. J. Appl. Phys., vol52, p128001, ...
Tags: GaN HFETs GaN MOCVD, Electrical, Electronics
ARPA-E deputy director Cheryl Martin has announced $27m in funding from the US Department of Energy's (DOE) Advanced Research Projects Agency-Energy (ARPA-E) for 14 projects aimed at developing next-generation power conversion devices that ...
Tags: Electrical, Electronics
Global electronic components distributor Digi-Key Corp of Thief River Falls, MN, USA has announced new inventory of gallium nitride (GaN) power management products, available for immediate shipment as part of an exclusive global ...
Tags: EPC E-mode GaN FETs, Electrical, Electronics
Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA has introduced the EPC9017 half-bridge development board for high-current, high-stepdown-voltage, buck intermediate bus converter (IBC) applications using enhancement-mode gallium ...
Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA, which makes enhancement-mode gallium nitride on silicon (eGaN) power field-effect transistors (FETs) for power management applications, has extended its range of high-speed, ...
Tags: EPC E-mode GaN FETs, Electrical, Electronics
Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA has introduced the EPC2018 as the newest member of its family of enhancement-mode gallium nitride on silicon (eGaN) power field-effect transistors (FETs). The EPC2018 is a ...
Tags: EPC E-mode GaN FETs, Electrical, Electronics
Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA has introduced the EPC2016 as the newest member of its family of enhancement-mode gallium nitride on silicon (eGaN) power field-effect transistors (FETs). The EPC2016 is a ...
Tags: Electrical, Electronics