Microsemi Corp of Aliso Viejo, CA, USA (which designs and makes analog and RF devices, mixed-signal integrated circuits, FPGAs and customizable SoCs, and subsystems) has expanded its family of radio-frequency transistors based on gallium ...
Tags: Microsemi, GaN on SiC, radio frequency transistors, HEMT
Following the previous release of the RF393X series of unmatched power transistors (UPTs) targeting continuous wave (CW) and pulsed peak power applications, RF Micro Devices Inc of Greensboro, NC, USA has production released two highly ...
Tags: RFMD, GaN power transistor, unmatched power transistors, continuous wave
Japan’s Fujitsu Semiconductor says it has achieved high output power of 2.5kW in server power -supply units equipped with gallium nitride (GaN) power devices built on a silicon substrate. The firm will exhibit the device for the ...
Tags: Fujitsu, GaN HEMT, Semiconductor, power devices, GaN technology
For third-quarter 2012, RF front-end component maker and foundry services provider TriQuint Semiconductor Inc of Hillsboro, OR, USA has reported revenue of $200.8m, down 7% on $216m a year ago but up 13% on $178m last quarter, driven by ...
Tags: TriQuint, TriQuint Semiconductor, smartphone, Mobile Devices
Sapphire substrates are used as a substrate for fabricating gallium nitride for use in white and blue LEDs,the market for which has seen recent growth thanks to the energy saving properties and greatly reduced environmental burden they ...
Tags: white LEDs, SMM, materials business
NGK Insulators, Ltd. has announced it has developed gallium nitride (GaN) wafers that double luminous efficiency of a LED light source compared to conventional materials. With the assistance of a research institute outside the Company, a ...
The GaN wafers developed by NGK feature low defect density across the entire 2-inch diameter of the wafer surface and have a colorless transparency. NGK achieved this through proprietary improvements to liquid phase epitaxial technology for ...
Tags: GaN wafers, green LED chips, LED
Australian clean technology innovator,BluGlass Limited announced today that it is now producing n-type gallium nitride(GaN)films with demonstrated industry equivalent performance properties using its breakthrough low temperature Remote ...
In conjunction with the Defense Manufacturing Conference (DMC) in Orlando, FL (26-29 November), RF front-end component maker and foundry services provider TriQuint Semiconductor Inc of Hillsboro, OR, USA has announced what it claims is ...
Tags: TriQuint GaN-on-SiC, Triquint
Sumitomo Metal Mining Co., Ltd. has set up a production line for large sapphire substrates at its fully-owned subsidiary Okuchi Electronics Co., Ltd., and has started mass production. Sapphire substrates are used as a substrate for ...
Tags: LED
Researchers in Korea have developed gold-doped graphene as a transparent and current-spreading electrode (TCSE) for ultraviolet (UV) light-emitting diodes (LEDs). Some of the research group from Chonbuk National University and ...
Tags: UV LED
GaN-on-Si is a new technology that has the potential to replace sapphire substrates in the LED supply chain. Erwin Ysewijn, vice president of sales and marketing at Azzurro Semiconductors, a Germany-based GaN-on-Si supplier, recently ...
Tags: led
National Chung Hsing University in Taiwan has developed a simple silane treatment to improve crystal quality/internal quantum efficiency (IQE) and light extraction in nitride semiconductor light-emitting diodes (LEDs) [Chung-Chieh Yang et ...
Tags: LED
Deep-ultraviolet (DUV) light is used for sterilization, assisting chemical reactions, and photolithography. The disadvantages of conventional DUV sources such as excimer lasers and mercury-vapor lamps—expense and inclusion of toxic ...
Tags: LED
Researchers in China have improved LED power output and droop behavior in nitride semiconductor light-emitting diodes (LEDs) by including an electron-emitting layer under the active region [Jianbao Zhang et al, Appl. Phys. Express, vol5, ...