SDK and TS Opto concluded an absorption-type company split agreement. (Since this is a case of "simplified absorption-type company split" involving SDK and its wholly owned subsidiary, part of the details are omitted from the scope of ...
Tags: SDK, TS Opto, GaN LED business, LED
Gallium nitride on silicon (GaN-on-Si)-based LEDs have been fabricated using high‐brightness LED structures of Epistar Corp of Taipei, Taiwan and the patented technology for 150mm GaN-on-Si substrates of Azzurro Semiconductors AG of ...
Tags: GaN-on-Si
9 October 2012 IQE's III-V-on-Si laser materials enable next-gen hard disk drive technology Epiwafer foundry and substrate maker IQE plc of Cardiff,Wales,UK says that it has produced epitaxial wafers combining the optical properties of ...
Tags: IQE III-V-on-Si, laser material, next-gen hard disk drive technology
China's government has been providing subsidies to help its domestic LED industry. Some firms have been benefitting but others remain in limbo amid rapid product price falls. Slowing demand for LED billboards According to sources from ...
Tags: led, sapphire substrate
AZZURRO Semiconductors AG of Dresden,Germany,which makes gallium nitride(GaN)epitaxial wafers based on large-area silicon substrates,has released a white paper that describes the easy migration of LED manufacturing to GaN-on-Si.Using its ...
Tags: AZZURRO, GaN-on-Si LEDs, Dresden, DTF, Taipei
Cree, Inc. announces its latest silicon carbide (SiC) offering with low basal plane dislocation (LBPD) 100-mm 4H SiC epitaxial wafers. This LBPD material exhibits a total BPD density of < 1 cm-2 in the epitaxial drift layer, with BPDs ...
Tags: Wafer
Cree continues to lead the SiC materials marketplace in driving to larger diameters and this latest advancement lowers device cost and enables adoption for customers with existing 150-mm diameter device processing lines. 150-mm epitaxial ...
Tags: Wafer
Cree Inc of Durham,NC,USA has introduced low basal plane dislocation(LBPD)100-mm 4H silicon carbide(SiC)epitaxial wafers.This LBPD material exhibits a total BPD density of 1 cm-2 in the epitaxial drift layer,with BPDs capable of causing Vf ...
Dongguan Tianyu Semiconductor Technology Co Ltd,which claims to be the first manufacturer of silicon carbide(SiC)epitaxial wafers in China,has started to expand its SiC epiwafer business globally after the completion of three contracts in ...
Cree Inc of Durham, NC, USA has announced the availability of high-quality, low-micropipe 150mm 4H n-type silicon carbide (SiC) epitaxial wafers, with highly uniform epitaxial layers as thick as 100 microns available for immediate purchase ...
Tags: SiC wafer
LED chipmaker Epistar has plans to completely take over subsidiary Huga Optotech through a share swap. Taiwan's largest chip maker, Epistar, has announced it will completely take over subsidiary Huga Optotech through ...
Tags: LED Chip
LED chipmaker Epistar will completely take over subsidiary Huga Optotech through a share swap in which one Epistar share will be exchanged for 4.85 Huga shares, Epistar has announced. The merger will take effect on December 28, 2012. The ...
Makers will boost the luminous efficacy of white LEDs, targeting 200 lm/W and above, and pursue breakthroughs in substrate materials, epitaxial chips and preparation.The southern province continues to solidify its status as the key hub for ...
Tags: LED
AZZURRO chooses Veeco K465i MOCVD system for GaN-on-Si epi production Epitaxial deposition and process equipment maker Veeco Instruments Inc of Plainview,NY,USA says that AZZURRO Semiconductors AG of Magdeburg,Germany,which makes gallium ...
Azzurro Semiconductors AG's development of next generation gallium nitride on 200 mm silicon substrates is supported by the local government of Saxony.The minister for science and technology,Sabine von Schorlemer handed the official grant ...
Tags: Azzurro, semiconductors, LED, GaN-on-Si-wafer-technology