Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA, which makes enhancement-mode gallium nitride on silicon (eGaN) power field-effect transistors (FETs) for power management applications, has launched the EPC9065, a development ...
Tags: Wireless Power, EPC
Advantech Wireless Inc of Montreal, Canada (which manufactures satellite, RF equipment and microwave systems), has launched a SapphireBlu solid-state power amplifier/power block (SSPA/SSPB), based on second-generation gallium nitride (GaN) ...
Tags: RF equipment, microwave systems
Qorvo Inc (which provides core technologies and RF solutions for mobile, infrastructure and defense applications) says that its recently launched RFPA55X2 Wi-Fi power amplifier (PA) family is enabling many of today's leading home and ...
Tags: Qorvo, Wi-Fi Platforms, power amplifier
For fourth-quarter 2015, GigOptix Inc of San Jose, CA, USA (a fabless supplier of analog semiconductor and optical communications components for fiber-optic and wireless networks) has reported a seventh consecutive quarter of revenue ...
Skyworks Solutions Inc of Woburn, MA, USA (which manufactures analog and mixed-signal semiconductors) has unveiled its suite of 75Ω low-noise amplifiers (LNAs) and high-performance switches supporting higher data rates across ...
Strong wireless demand resulted in growth of more than 25% in the gallium arsenide (GaAs) IC market in 2015, according to The Information Network in its report 'The GaAs IC Market'. Every cell phone contains power amplifiers (PA), ...
Tags: GaAs IC Market, PA
Mitsubishi Electric Corp, Tokyo Institute of Technology, Ryukoku University and Microwave Chemical Co Ltd have jointly developed a microwave heating system that uses 500W-output gallium nitride (GaN) amplifier modules as heat sources. The ...
Pasternack Enterprises Inc of Irvine, CA, USA (which makes both passive and active RF, microwave and millimeter-wave products) has launched a 19-inch rack-mounted variable-gain RF amplifier operating from 100MHz to 18GHz, designed for lab ...
Tags: Pasternack, RF Amplifier
Fabless semiconductor firm RFaxis Inc of Irvine, CA, USA, which designs RF semiconductors and embedded antenna solutions for wireless connectivity and cellular mobility, has launched a new family of ultra-miniature 2.4GHz RF front-end IC ...
Tags: RFaxis CMOS, amplifier
Tokyo-based Mitsubishi Electric Corp is expanding its lineup of gallium nitride high-electron-mobility transistors (GaN HEMTs) for use in base transceiver stations (BTS) operating in the 3.5GHz band of fourth generation (4G) mobile ...
Tags: Mitsubishi Electric, GaN HEMT, Electronics
Engineered materials and optoelectronic component maker II-VI Inc of Saxonburg, PA, USA has announced a portfolio of ultra-compact optical components that enable the emerging CFP2-ACO (analog coherent optics) pluggable transceiver ...
Tags: II-VI Inc, Saxonburg, Electronics
After the RF Power business of NXP Semiconductors N.V. was acquired by China's Jianguang Asset Management Co Ltd (JAC Capital), the newly created firm Ampleon of Nijmegen, The Netherlands has extended its portfolio of gallium nitride (GaN) ...
Tags: Ampleon, GaN RF Power Transistor, broadband
Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA, which makes enhancement-mode gallium nitride on silicon (eGaN) power field-effect transistors (FETs) for power management applications, has announced publication of the second ...
Tags: EPC, E-mode GaN FETs
Plextek RF Integration of Great Chesterford, near Cambridge, UK, which designs and develops RFICs, MMICs and microwave/millimeter-wave modules, says that on 3 December at 18:00GMT (10:00PT/13:00ET/19:00CET) its CEO Liam Devlin is presenting ...
Tags: Plextek, GaN Transistors, GaN transistor
Teledyne Microwave Solutions Inc of Mountain View, CA, USA (TMS, a business unit of Teledyne Technologies Inc) has launched a line of gallium nitride (GaN)-based wideband amplifiers that is claimed to further lower the form factor threshold ...
Tags: TMS, GaN amplifiers