The 2012 Lighting Year began with the historic phase-out of the incandescent light bulb. The year continued with the 50th anniversary of the light-emitting diode (LED) in October and ended in December with yet another Greatest LED. ...
Tags: Philips, LED, LED lamp, LED Lighting, OsramNXP Cree
The 2012 Lighting Year began with the historic phase-out of the incandescent light bulb. The year continued with the 50th anniversary of the light-emitting diode (LED) in October and ended in December with yet another Greatest LED. ...
Tags: Philips LED, LED lamp, LED Lighting, OsramNXP Cree
The impact of using a vertical current injection structure was also seen in a higher external quantum effi- ciency (EQE) of 16.2% at 350mA, com- pared with 13.2% for the LLED. At 550mA, the VLED EQE fell 11.9%, com- pared with14.6% for the ...
Tags: LED
Light output power increased 23% over conventional lateral LEDs. Korea's universities have used aluminum-alloyed graphite as a thermally conducting substrate to improve the light output power performance of nitride semiconductor LEDs by ...
Tags: LED
LED utilization rates are picking up again, with utilization in Taiwan now back up to 70 to 90 percent of capacity. Companies expect to be back to close to 100 percent in a month or two, driven by TV backlight demand, reports Yole ...
Power+Energy Inc(P+E)of Ivyland,PA,USA,which provides palladium-membrane-based hydrogen purifiers for the compound semiconductor and energy industries,for Gallium Nitride at the University of Cambridge.The micro-channel palladium purifier ...
AIXTRON SE introduced a 5 x 200mm gallium nitride on silicon (GaN-on-Si) reactor design for its G5 Planetary Reactor metal organic chemical vapor deposition (MOCVD) platform. AIX G5+ comprises special reactor hardware and process design, ...
Tags: MOCVD
While growth in the LED industry came initially from small display applications and was furthered by LCD display applications, lower-than-expected adoption of LEDs in the TV market and the entry of several new players (mostly from Asia) in ...
Tags: LED Package
Seoul Semiconductor claims 5x brightness with non-polar LEDs 10 Jul 2012 Seoul Semiconductor has announced that it will introduce LEDs based on non-polar technology,which it claims will deliver over 5x the lumens per unit area of ...
The LED consists of a chip of semiconducting material doped with impurities to create a p-n junction. As in other diodes, current flows easily from the p-side, or anode, to the n-side, or cathode, but not in the reverse direction. ...
Tags: LED
Scientists at the Fraunhofer Institute for Solar Energy Systems ISE in Freiburg, Germany have successfully tested power transistors made of gallium nitride (GaN) in power electronic systems. By using such transistors the researchers says ...
Tags: Fraunhofer, ISE, GaN, power transistor
Deposition equipment maker Aixtron SE of Herzogenrath, Germany says that existing customer UMI Georgia Tech-CNRS in Metz, France has bought a 3x2”-wafer Close Coupled Showerhead (CCS) metal organic chemical vapour deposition (MOCVD) ...
Tags: Aixtron, MOCVD, deposition equipment, chemical vapour deposition
Soraa Inc of Fremont, CA, USA, which develops solid-state lighting technology built on ‘GaN on GaN’ (gallium nitride on gallium nitride) substrates, says that its GaN-on-GaN LED MR16 Vivid and Outdoor lamps have been recognized ...
Tags: Soraa, LEDs, GaN, lighting technology
Veeco announced that Nantong Tongfang Semiconductor Co., Ltd. has received shipment of Veeco's TurboDisc® K465i™ MOCVD System for research of GaN-on-Si HB LEDs. The system was delivered to Tongfang's new LED Technology Center in ...
Wide-bandgap semiconductor materials such as gallium nitride (GaN) offer far higher performance than traditional silicon but cost significantly more. However, by 2020 GaN costs will drop enough for it to become competitive based on ...
Tags: Bulk GaN, traditional silicon, gallium nitride, reckons market