Japan’s Fujitsu Semiconductor says it has achieved high output power of 2.5kW in server power -supply units equipped with gallium nitride (GaN) power devices built on a silicon substrate. The firm will exhibit the device for the ...
Tags: Fujitsu, GaN HEMT, Semiconductor, power devices, GaN technology
For third-quarter 2012, RF front-end component maker and foundry services provider TriQuint Semiconductor Inc of Hillsboro, OR, USA has reported revenue of $200.8m, down 7% on $216m a year ago but up 13% on $178m last quarter, driven by ...
Tags: TriQuint, TriQuint Semiconductor, smartphone, Mobile Devices
Soraa’s perfect spectrum GaN on GaNTM LED MR16 Vivid and Outdoor lamps have been recognized by the Illuminating Engineering Society (IES) Progress Committee as providing important advancements in the science of light. The accepted ...
Tags: LEDs Lighting, Soraa, IES
NGK Insulators, Ltd. has announced it has developed gallium nitride (GaN) wafers that double luminous efficiency of a LED light source compared to conventional materials. With the assistance of a research institute outside the Company, a ...
Erecting Taishan shi-gan-dang nearby the houses, villages, bridges and roads has a long history in China. The word of “shi-gan-dang” first appeared in Han Dynasty. During Tang Dynasty, these three characters have been carved on ...
Tags: Taishan shi-gan-dang, Chinese tradition, Chinese culture, Chinese History
The GaN wafers developed by NGK feature low defect density across the entire 2-inch diameter of the wafer surface and have a colorless transparency. NGK achieved this through proprietary improvements to liquid phase epitaxial technology for ...
Tags: GaN wafers, green LED chips, LED
Australian clean technology innovator,BluGlass Limited announced today that it is now producing n-type gallium nitride(GaN)films with demonstrated industry equivalent performance properties using its breakthrough low temperature Remote ...
In conjunction with the Defense Manufacturing Conference (DMC) in Orlando, FL (26-29 November), RF front-end component maker and foundry services provider TriQuint Semiconductor Inc of Hillsboro, OR, USA has announced what it claims is ...
Tags: TriQuint GaN-on-SiC, Triquint
The Illuminating Engineering Society (IES) Progress Committee has recognized Soraa' s GaN-on-GaN LED MR16 Vivid and Outdoor lamps as providing important advancements in the science of light. An alternative to halogen 50W MR16 lamps, ...
Tags: LED Lamp
Researchers in Korea have developed gold-doped graphene as a transparent and current-spreading electrode (TCSE) for ultraviolet (UV) light-emitting diodes (LEDs). Some of the research group from Chonbuk National University and ...
Tags: UV LED
At this year’s China SSL Conference , AIXTRON again has hosted an MOCVD seminar along with the China Solid State Lighting Alliance (CSA). More than 200 decision-makers from industry and research took part in AIXTRON’s ...
Tags: MOCVD
GaN-on-Si is a new technology that has the potential to replace sapphire substrates in the LED supply chain. Erwin Ysewijn, vice president of sales and marketing at Azzurro Semiconductors, a Germany-based GaN-on-Si supplier, recently ...
Tags: led
The release of GAN-on-silicon LED chips in China presents a lower-cost alternative that is comparable in quality to mainstream products based on sapphire and SiC substrates. R&D work leveraging the advantages of silicon substrates has ...
Tags: led chip
Azzurro and Epistar say they have achieved GaN-on-Si based LEDs utilizing Epistar's high-brightness LED structures and Azzurro's patented technology for 150mm GaN-on-Si. The joint project, completed in four months, transferred Epistar's ...
National Chung Hsing University in Taiwan has developed a simple silane treatment to improve crystal quality/internal quantum efficiency (IQE) and light extraction in nitride semiconductor light-emitting diodes (LEDs) [Chung-Chieh Yang et ...
Tags: LED